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本征磁性拓扑绝缘体MnBiTe中的零场手性边缘输运

Zero-field chiral edge transport in an intrinsic magnetic topological insulator MnBiTe.

作者信息

Zhang Chusheng, Lu Xiufang, Wang Naizhou, Huang Tianye, Zhang Hanxiang, Cao Ning, Wang Aifeng, Zhou Xiaoyuan, Watanabe Kenji, Taniguchi Takashi, Xu Su-Yang, Gao Weibo

机构信息

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.

Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, P. R. China.

出版信息

Nat Commun. 2025 Jul 1;16(1):5587. doi: 10.1038/s41467-025-59160-z.

DOI:10.1038/s41467-025-59160-z
PMID:40593498
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12214805/
Abstract

The Dissipationless chiral edge state (CES) stands as a pivotal feature in quantum anomalous Hall (QAH) insulators. The dissipationless nature and chirality give rise to unique transport properties and provide insights into future electronics and spintronics. In recent years, a new van der Waals intrinsic magnetic topological insulator, MnBiTe (MBT), has attracted significant research interests. The quantum anomalous Hall effect has been successfully achieved in odd-layer MBT. However, few studies can reproduce the zero-field quantization due to poor sample quality, and as a result, the transport properties of CES have rarely been explored in a well quantized MBT sample at zero magnetic field. Here, we report an electrical transport study of CES in a 5-septuple layer (SL) MBT sample, in which zero-field quantization is successfully achieved. The four-terminal and three-terminal measurements provide unambiguous evidence for the presence of zero-field CES in the sample. The nonreciprocal resistance transport demonstrates the dominance of CES at charge neutrality point, as well as the strong interplay between CES and bulk conduction channels at band edge. Our research enriches the fundamental understanding of chiral edge states in MBT and paves the way for future dissipationless electronics applications.

摘要

无耗散手性边缘态(CES)是量子反常霍尔(QAH)绝缘体的一个关键特征。其无耗散特性和手性导致了独特的输运性质,并为未来的电子学和自旋电子学提供了见解。近年来,一种新型的范德华本征磁性拓扑绝缘体MnBiTe(MBT)引起了广泛的研究兴趣。在奇数层MBT中已成功实现了量子反常霍尔效应。然而,由于样品质量较差,很少有研究能够重现零场量子化,因此,在零磁场下的良好量子化MBT样品中,很少探索CES的输运性质。在此,我们报告了对一个5重层(SL)MBT样品中CES的电输运研究,其中成功实现了零场量子化。四端和三端测量为样品中零场CES的存在提供了明确的证据。非互易电阻输运证明了在电荷中性点处CES的主导地位,以及在能带边缘处CES与体传导通道之间的强相互作用。我们的研究丰富了对MBT中手性边缘态的基本理解,并为未来的无耗散电子应用铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/a9da0f279fb8/41467_2025_59160_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/622d93c2d5c5/41467_2025_59160_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/14186a3050ba/41467_2025_59160_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/da41cbff2cdc/41467_2025_59160_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/a9da0f279fb8/41467_2025_59160_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/622d93c2d5c5/41467_2025_59160_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/14186a3050ba/41467_2025_59160_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/da41cbff2cdc/41467_2025_59160_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efe6/12214805/a9da0f279fb8/41467_2025_59160_Fig4_HTML.jpg

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本文引用的文献

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Antiferromagnetic quantum anomalous Hall effect under spin flips and flops.自旋翻转和摆动下的反铁磁量子反常霍尔效应
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