Pressure-dependent exciton absorption and photoluminescence in colloidal InAs/ZnSe core/shell quantum dots.

We investigated the pressure-dependent exciton absorption and photoluminescence (PL) properties of colloidal InAs/ZnSe core/shell quantum dots (QDs) emitting near-infrared (NIR) photons, an environmentally friendly alternative to heavy-metal-containing NIR QDs. A detailed analysis of exciton absorption and emission spectra was conducted in the pressure range of 0-10 GPa, focusing on the energy shifts, PL intensity, and lineshape changes with pressure. The pressure coefficients for exciton absorption and PL peaks were ∼70% of the bulk InAs value, with enhanced bandgap nonlinearity tentatively attributed to the higher bulk modulus of QDs compared to bulk material. The pressure-induced shifts in exciton absorption and PL peaks were reversible upon compression and decompression, with no indication of the semiconductor-to-metallic phase transition observed in bulk InAs around 7 GPa. However, PL intensity exhibited partial irreversibility, suggesting defect formation at the core/shell interface under pressure. From the findings of this study, along with previous high-pressure studies on molecular beam epitaxy-grown InAs QDs on GaAs, we infer the importance of the shell in determining the pressure response of exciton absorption and PL in core/shell QD structures with non-negligible interfacial strain and wave function spill into the shell.