Dong Yan, Li Mengmeng, Liu Yanli, Lei Jianming, Bai Haineng, Sun Yanmei, Chen Dunjun, Zhu Dongjie, Wang Rigao, Sun Yi
College of Electrical Engineering, Zhejiang University of Water Resources and Electric Power, Hangzhou 310018, China.
Zhejiang-Belarus Joint Laboratory of Intelligent Equipment and System for Water Conservancy and Hydropower Safety Monitoring, Hangzhou 310018, China.
Molecules. 2025 Jun 20;30(13):2669. doi: 10.3390/molecules30132669.
Slight changes in potassium levels can affect health. Therefore, rapid, reliable, and quantitative determination of potassium ion content is important for medical diagnosis. AlGaN, as a semiconductor material with good biocompatibility, has many advantages in the development of new potassium ion sensors. Understanding the adsorption behavior of a specific ion on the AlGaN surface and the eventual effect on AlGaN/GaN's heterostructure interface is the key to obtaining high-performance nitride sensors. In this paper, we calculated the changes in the density of states and energy bands of the material after AlGaN adsorbed potassium ions through first-principles simulation. Combined with two-dimensional device simulation software, the changes in device performance caused by the changes in material properties are presented. The simulation results show that the adsorption of a single potassium ion can cause a current change in the order of milliamperes, providing a theoretical reference for the subsequent development of high-sensitivity potassium ion sensors.
钾离子水平的轻微变化都会影响健康。因此，快速、可靠且定量地测定钾离子含量对于医学诊断至关重要。氮化铝镓（AlGaN）作为一种具有良好生物相容性的半导体材料，在新型钾离子传感器的研发中具有诸多优势。了解特定离子在AlGaN表面的吸附行为以及最终对AlGaN/GaN异质结构界面的影响，是获得高性能氮化物传感器的关键。在本文中，我们通过第一性原理模拟计算了AlGaN吸附钾离子后材料的态密度和能带变化。结合二维器件模拟软件，呈现了材料性质变化所导致的器件性能变化。模拟结果表明，单个钾离子的吸附可引起毫安级别的电流变化，为后续高灵敏度钾离子传感器的研发提供了理论参考。
