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氧化铜层修饰的氧化钛薄膜光催化活性优化的起源

Origin of the Optimization of Photocatalytic Activities for Titanium Oxide Film Modified by an Oxidized Copper Layer.

作者信息

Chen Jian-An, Tsai Shu-Min, Hong Yi-You, Shih Pin-Jyun, Liu Day-Shan

机构信息

Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan.

出版信息

Materials (Basel). 2025 Jun 24;18(13):2993. doi: 10.3390/ma18132993.

DOI:10.3390/ma18132993
PMID:40649480
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12250997/
Abstract

In this study, the surface photocatalytic activity of an anatase-titanium oxide (TiO) film was modified by a thin copper (Cu) layer with the subsequential oxidation annealing process. Through this simple annealing process, the photocatalytic activity of the TiO/Cu structure to decompose the methylene blue solution and inhibit the growth of . could be optimized. With the help of a study on the conductive type required for the oxidation of a single Cu layer, an nanocomposite heterojunction was realized, as this contact system anneals at temperatures of 350 °C and 450 °C. An extra electrical field at the contact interfaces that was be beneficial for separating the photo-generated electron-hole pairs (EHPs) under UV light irradiation was built. The built-in electrical field led to an increase in the structural photocatalytic activity. Moreover, as the -type cuprous oxide (-CuO) structure oxidized by the annealed Cu layer could provide a high conduction band that is offset when in contact with the TiO film, the photogenerated EHPs on the TiO surface could be separated more effectively. Accordingly, the 350 °C-annealed sample, abundant in the nanocomposite TiO/CuO heterojunction which could significantly retard the recombination of photo-generated carriers, corresponded to an increase of about 38% in the photocatalytic activity as compared with the single TiO film.

摘要

在本研究中,通过后续氧化退火工艺,用薄铜(Cu)层对锐钛矿型二氧化钛(TiO₂)薄膜的表面光催化活性进行了改性。通过这种简单的退火工艺,可以优化TiO₂/Cu结构对亚甲基蓝溶液的光催化分解活性以及抑制其生长的能力。借助对单层Cu氧化所需导电类型的研究,实现了一种纳米复合异质结,因为这种接触系统在350℃和450℃的温度下退火。在紫外光照射下,在接触界面处建立了一个有利于分离光生电子-空穴对(EHPs)的额外电场。该内建电场导致结构光催化活性增加。此外,由于经退火的Cu层氧化形成的p型氧化亚铜(p-Cu₂O)结构可以提供一个与TiO₂薄膜接触时发生偏移的高导带,TiO₂表面的光生EHPs可以更有效地分离。因此,在350℃退火的样品中富含纳米复合TiO₂/Cu₂O异质结,这可以显著延迟光生载流子的复合,与单一TiO₂薄膜相比,其光催化活性提高了约38%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/73355554f5ed/materials-18-02993-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/dab2224862b1/materials-18-02993-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/e9b7dd945c8e/materials-18-02993-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/12a15a07ec6f/materials-18-02993-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/69f92300d6db/materials-18-02993-g006.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/40bd03ef4e2b/materials-18-02993-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/73355554f5ed/materials-18-02993-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/dab2224862b1/materials-18-02993-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/4e100ac1e8cc/materials-18-02993-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/197708cc1572/materials-18-02993-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/e9b7dd945c8e/materials-18-02993-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/12a15a07ec6f/materials-18-02993-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/69f92300d6db/materials-18-02993-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/442a/12250997/6eab3b56395c/materials-18-02993-g007.jpg
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