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锰掺杂层状混合溴化铅钙钛矿单晶中的确定性结构畸变

Deterministic Structural Distortion in Mn-Doped Layered Hybrid Lead Bromide Perovskite Single Crystals.

作者信息

Yadav Pushpender, Moon Kyeongdeuk, Shoaib Muhammad, Thapa Puja, Sun Rui, Yang Seungmin, Heo Jung-Moo, Seong Sijun, McCracken John, Gong Xiwen, Kim Jinsang, Bang Joonho, Sun Dali, Kim Seokhyoung

机构信息

Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, United States.

Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States.

出版信息

ACS Nano. 2025 Jul 29;19(29):26920-26931. doi: 10.1021/acsnano.5c08324. Epub 2025 Jul 17.

Abstract

Dilute magnetic doping in wide-bandgap semiconductors has attracted significant interest due to its potential for tailored optical, spintronic, and spin-photonic properties. While extensive research has explored the optical and magnetic properties of these doped systems, the exact nature of dopant-induced structural properties, particularly in high-quality single crystals, requires further investigation. Here, we demonstrate the synthesis of Mn-doped (BA)PbBr (BA=butylammonium) single crystals with well-defined crystal habits and no grain boundaries, enabling controlled investigation into significant crystal deformation as a function of Mn incorporation. Structural analysis provides compelling evidence of crystal distortion, manifested by a smooth transition from square nanoplatelets to parallelogram shapes with an in-plane shear distortion of up to ∼6° and an out-of-plane contraction of 9.7% for the highest 4.95% Mn concentration. This magnitude of structural change significantly exceeds the typical range observed in doped semiconductors by an order of magnitude. We show, using density functional theory calculations, that the structural distortion upon doping is driven by a thermodynamic energy gain. Static and time-resolved photoluminescence spectroscopy confirms the successful incorporation of Mn with characteristic emission at 600 nm with an approximate 0.3 ms radiative lifetime. The uniform incorporation of Mn into the host medium is further corroborated by the hyperfine structure in an electron paramagnetic resonance spectrum and the paramagnetic response in superconducting quantum interference device measurements. These findings offer crucial insights into dopant-induced structural modifications, supporting the rational design of dilute magnetic semiconductors for spin-based information technologies.

摘要

宽带隙半导体中的稀磁掺杂因其在定制光学、自旋电子学和自旋光子学特性方面的潜力而引起了广泛关注。尽管已有大量研究探索了这些掺杂体系的光学和磁性特性,但掺杂剂诱导的结构特性的确切性质,尤其是在高质量单晶中,仍需进一步研究。在此,我们展示了具有明确晶体习性且无晶界的Mn掺杂(BA)PbBr(BA = 丁基铵)单晶的合成,这使得我们能够对随Mn掺入而产生的显著晶体变形进行可控研究。结构分析提供了晶体畸变的有力证据,表现为从方形纳米片到平行四边形形状的平滑转变;对于最高4.95%的Mn浓度,面内剪切畸变高达约6°,面外收缩为9.7%。这种结构变化的幅度比掺杂半导体中观察到的典型范围显著高出一个数量级。我们通过密度泛函理论计算表明,但掺杂引起的结构畸变是由热力学能量增益驱动的。静态和时间分辨光致发光光谱证实了Mn的成功掺入,其在600 nm处有特征发射,辐射寿命约为0.3 ms。电子顺磁共振谱中的超精细结构以及超导量子干涉装置测量中的顺磁响应进一步证实了Mn均匀掺入主体介质中。这些发现为掺杂剂诱导的结构修饰提供了关键见解,支持了用于自旋信息技术的稀磁半导体的合理设计。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6fdf/12312163/920f9407aa46/nn5c08324_0001.jpg

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