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用于稳定高效无机钙钛矿太阳能电池的3-(氨甲基)哌啶鎓间隔基诱导的CsPbI下方的狄翁-雅各布森二维钙钛矿

3-(Aminomethyl)piperidinium Spacer-Induced Dion-Jacobson 2D Perovskite Beneath CsPbI for Stable and Efficient Inorganic Perovskite Solar Cells.

作者信息

Kang Sohyun, Lee Seungmin, Oh Oui Jin, Kim Dong Hyun, Kim Chan Young, Kim Sung Yong, Hong Hyojin, Park Jeong Hyeon, Noh Jun Hong

机构信息

School of Civil, Environmental and Architectural Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea.

KU-KIST Green School Graduate School of Energy and Environment, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea.

出版信息

ChemSusChem. 2025 Jul 21:e2501062. doi: 10.1002/cssc.202501062.

DOI:10.1002/cssc.202501062
PMID:40689568
Abstract

For the inorganic perovskite CsPbI, while many strategies have focused on passivating the top surface, engineering the interface beneath the perovskite layer remains a critical yet underexplored avenue, primarily due to the high crystallization temperature and the dissolution of underlying layers during solution processing. Here, these longstanding challenges are addressed by introducing a strategic placement of a Dion-Jacobson quasi-2D perovskite layer beneath CsPbI. Specifically, 3-(aminomethyl)piperidinium iodide (3AMPI), an organic salt insoluble in the CsPbI precursor solution, is employed to form a robust quasi-2D interlayer without degradation during perovskite deposition and annealing. This bottom-layer integration passivates interfacial defects, promotes favorable crystallization of CsPbI, and results in significantly enhanced device performance, achieving a power conversion efficiency of 20.98%, an open-circuit voltage (V) of 1.21 V, a short-circuit current density (J) of 20.59 mAcm, and a fill factor of 84.21%, along with robust long-term operational stability. The findings demonstrate a targeted interfacial design approach that unlocks new opportunities for simultaneously optimizing efficiency and stability in inorganic perovskite photovoltaics.

摘要

对于无机钙钛矿CsPbI,虽然许多策略都集中在对其顶面进行钝化处理,但对钙钛矿层下方界面进行工程设计仍是一条关键但尚未充分探索的途径,这主要是由于其结晶温度高以及在溶液处理过程中下层会溶解。在此,通过在CsPbI下方引入一层经过策略性放置的狄龙-雅各布森准二维钙钛矿层,解决了这些长期存在的挑战。具体而言,使用3-(氨甲基)哌啶碘化物(3AMPI),一种不溶于CsPbI前驱体溶液的有机盐,来形成一个坚固的准二维中间层,在钙钛矿沉积和退火过程中不会降解。这种底层整合钝化了界面缺陷,促进了CsPbI的良好结晶,并显著提高了器件性能,实现了20.98%的功率转换效率、1.21 V的开路电压(V)、20.59 mAcm的短路电流密度(J)以及84.21%的填充因子,同时还具有强大的长期运行稳定性。这些发现展示了一种有针对性的界面设计方法,为同时优化无机钙钛矿光伏器件的效率和稳定性开辟了新的机遇。

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