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通过SnO/钙钛矿界面的分子桥接实现的高效钙钛矿光伏电池。

Highly Efficient Perovskite Photovoltaics Enabled by Molecular Bridging at the SnO/Perovskite Interface.

作者信息

Mohammed Mustafa K A

机构信息

Department of Geophysics, College of Remote Sensing and Geophysics, Al-Karkh University of Science, Haifa St. Hamada Palace, Baghdad 10011, Iraq.

College of Science, University of Warith Al-Anbiyaa, 56001 Karbala, Iraq.

出版信息

Langmuir. 2025 Jul 8;41(26):16960-16969. doi: 10.1021/acs.langmuir.5c01464. Epub 2025 Jun 26.

DOI:10.1021/acs.langmuir.5c01464
PMID:40566905
Abstract

The contact at the interface of the perovskite and the electron transport layer is critical in determining the efficiency and durability of perovskite solar cells (PSCs). The nonuniformity of the carrier significantly influences the carrier transport mechanisms at the buried interface. In order to tackle this issue, a bridging molecule, (2-aminoethyl)phosphonic acid (AEP), is utilized for the modulation of the tin oxide (SnO)/perovskite buried interface in a typical PSC. The phosphonic acid group forms a strong interaction with SnO, which effectively suppresses photocarrier traps and leakage current while also tuning the surface potential. In addition, the amino group plays a significant role in the perovskite film. Subsequently, a single-light-harvesting material structure based on FTO/SnO/AEP/(MAFA)Pb(ICl)/Spiro-OMeTAD/Au PSCs is designed. Highly efficient PSCs have been developed through the selective integration of a mixed-cation perovskite material, featuring a band gap of 1.5 eV. The performance of AEP-modified PSCs was calculated and analyzed using the solar cell capacitor simulator program. Simulating the AEP-modified PSCs yields optimal device configurations, achieving a short-circuit current density of 26.65 mA/cm, a fill factor of 87.34%, and an open-circuit voltage of 1.21 V. Furthermore, a comparison between the parameters of the AEP-free PSC and the optimized device revealed that the addition of an interfacial AEP passivation layer could increase the power conversion efficiency from 19.65 to 28.36%, resulting in an improved photon-to-electron conversion property.

摘要

钙钛矿与电子传输层界面处的接触对于决定钙钛矿太阳能电池(PSC)的效率和耐久性至关重要。载流子的不均匀性显著影响掩埋界面处的载流子传输机制。为了解决这个问题,一种桥连分子,即(2-氨基乙基)膦酸(AEP),被用于在典型的PSC中调制氧化锡(SnO)/钙钛矿掩埋界面。膦酸基团与SnO形成强相互作用,有效抑制光载流子陷阱和漏电流,同时还能调节表面电位。此外,氨基在钙钛矿薄膜中起着重要作用。随后,设计了一种基于FTO/SnO/AEP/(MAFA)Pb(ICl)/Spiro-OMeTAD/Au PSC的单光捕获材料结构。通过选择性集成带隙为1.5 eV的混合阳离子钙钛矿材料,开发出了高效的PSC。使用太阳能电池电容模拟器程序对AEP修饰的PSC的性能进行了计算和分析。对AEP修饰的PSC进行模拟得到了最佳器件配置,实现了26.65 mA/cm的短路电流密度……此处原文可能有误,推测可能是26.65 mA/cm² ,填充因子为87.34%,开路电压为1.21 V。此外,无AEP的PSC与优化器件的参数比较表明,添加界面AEP钝化层可将功率转换效率从19.65%提高到28.36%,从而改善了光子到电子的转换性能。

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