Wei Shiyu, Li Zhe, Karawdeniya Buddini I, Chen Chaohao, Tan Hark Hoe, Jagadish Chennupati, Qiu Longzhen, Fu Lan
National Engineering Lab of Special Display Technology, School of Instrument and Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China.
Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
ACS Sens. 2025 Aug 22;10(8):5339-5362. doi: 10.1021/acssensors.5c00526. Epub 2025 Jul 22.
In recent years, semiconductor nanowires have emerged as a promising platform for the development of next-generation sensing devices due to their nanoscale, one-dimensional geometry, high surface-to-volume ratio, and superior thermal, mechanical, optical, and electrical properties. III-V semiconductor-based nanowires, which have been extensively studied for the development of high-performance optoelectronic devices such as lasers, LEDs, photodetectors, and solar cells, also offer advantages for sensor applications due to their electronic band structure, efficient carrier transport, and well-established CMOS-compatible fabrication technology. In this article, we review the recent advancements in III-V nanowire array-based sensors. We first introduce the fabrication methods for III-V nanowire arrays, followed by a detailed discussion of different types of sensors based on this material, including chemical, mechanical, and magnetic sensors. The working mechanisms of these sensors are explained, with an emphasis on various design strategies to enhance the sensitivity, selectivity, stability, and energy efficiency. Finally, the current challenges and future perspectives for III-V nanowire array sensors are analyzed to provide further insights into new directions for III-V nanowire materials and device designs to enhance sensor performance for real-world applications.
近年来，半导体纳米线因其纳米尺度、一维几何结构、高表面积与体积比以及优异的热、机械、光学和电学性能，已成为开发下一代传感设备的一个有前景的平台。基于III-V族半导体的纳米线，已被广泛研究用于开发诸如激光器、发光二极管、光电探测器和太阳能电池等高性能光电器件，由于其电子能带结构、高效的载流子传输以及成熟的与互补金属氧化物半导体兼容的制造技术，在传感器应用方面也具有优势。在本文中，我们综述了基于III-V族纳米线阵列的传感器的最新进展。我们首先介绍III-V族纳米线阵列的制造方法，随后详细讨论基于这种材料的不同类型的传感器，包括化学传感器、机械传感器和磁传感器。解释了这些传感器的工作机制，重点强调了各种提高灵敏度、选择性、稳定性和能量效率的设计策略。最后，分析了III-V族纳米线阵列传感器当前面临的挑战和未来前景，以便进一步深入了解III-V族纳米线材料和器件设计的新方向，从而提高传感器在实际应用中的性能。
