Research Progress and Future Perspectives on Photonic and Optoelectronic Devices Based on p-Type Boron-Doped Diamond/n-Type Titanium Dioxide Heterojunctions: A Mini Review.

Titanium dioxide (TiO) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron-hole separation. Additionally, TiO exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD's thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology.