Saha Shantanu, Sankar Shrivatch, Arafin Shamsul
Department of Electrical, Electronics and Communication Engineering, GITAM School of Technology, GITAM (Deemed to be University), Hyderabad, Telangana 502329, India.
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America.
Nanotechnology. 2025 Aug 4;36(31). doi: 10.1088/1361-6528/adf2b0.
Two dimensional layered hexagonal boron nitride (h-BN) has recently emerged as a promising quantum material for quantum information science and engineering primarily due to its excellent chemo-mechanical stability and efficacy in hosting quantum point defects (QPDs). These QPDs potentially act as spin based quantum devices and systems which exhibit valuable quantum properties, making them highly sought after in quantum research. This mini-review focuses on the recent progress of neutron irradiated h-BN, the resulting QPDs, and how they function as spin-based quantum sensors. We also outline the key technical challenges associated with the development of high performance quantum devices as well as the improvements needed to enhance quantum properties in such neutron irradiated h-BN. Our review is expected to accelerate further research on neutron irradiation of h-BN for quantum applications and drive interest in the deterministic creation of spin-based quantum emitters.
二维层状六方氮化硼（h-BN）最近已成为量子信息科学与工程领域一种很有前景的量子材料，这主要归功于其出色的化学机械稳定性以及在容纳量子点缺陷（QPD）方面的效能。这些量子点缺陷有可能充当基于自旋的量子器件和系统，展现出有价值的量子特性，使其在量子研究中备受追捧。本综述聚焦于中子辐照h-BN的最新进展、由此产生的量子点缺陷，以及它们如何作为基于自旋的量子传感器发挥作用。我们还概述了与高性能量子器件开发相关的关键技术挑战，以及增强此类中子辐照h-BN中的量子特性所需的改进措施。我们的综述有望加速对用于量子应用的h-BN中子辐照的进一步研究，并激发对基于自旋的量子发射器确定性创建的兴趣。
