Annealing-Driven Modifications in ZnO Nanorod Thin Films and Their Impact on NO Sensing Performance.

This research examines the effect of annealing temperature on the growth orientation of zinc oxide (ZnO) nanorods and its subsequent influence on NO gas sensing efficiency. Zinc oxide (ZnO) nanorods were synthesized using the chemical bath deposition method, followed by annealing at 300, 400, and 500 °C. Diffraction analysis confirmed that both non-annealed and annealed ZnO nanorods crystallize in a hexagonal wurtzite structure. However, increasing the annealing temperature shifts the growth orientation from the c-axis (002) toward the (100) and (101) directions. Microscopy images (FE-SEM) revealed a reduction in nanorod diameter as the annealing temperature increases. Optical characterization using UV-visible and photoluminescence spectroscopy indicated shifts in the band gap energy and emission properties. Contact angle measurements demonstrated the hydrophobic nature of the films. Gas sensing tests at 200 °C revealed that the ZnO thin film annealed at 400 °C achieved the highest NO response of 5.88%. The study highlights the critical role of annealing in modifying the crystallinity, growth orientation, and defect states of ZnO thin films, ultimately enhancing their NO detection capability.