Huang Hua-Jing, Wang Chien-Hua, Wang Che-Hung, Shen Fang-Chun, Yang Shih-Chi, Ong Jia-Juen, Chiu Wei-Lan, Chang Hsiang-Hung, Chen Chih, Wu Wen-Wei
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsinchu 30010, Taiwan.
ACS Nano. 2025 Aug 26;19(33):30211-30220. doi: 10.1021/acsnano.5c07534. Epub 2025 Jul 31.
Electromigration (EM) poses significant challenges to the reliability of miniaturized devices, particularly three-dimensional integrated circuits (3DICs) operating under high current densities. The EM phenomenon results from atomic-scale mechanisms involving momentum transfer between electron carriers and atoms. In this study, high-resolution transmission electron microscopy (HRTEM) was employed to investigate the atomic-scale behavior of EM in Cu-Cu joints. The analysis revealed that EM initially induced slip along various crystallographic planes, which gradually evolved into a stable slip along specific orientations, dominating the failure. This anisotropic atomic transport led to progressive degradation at the Cu-Cu bonding interface, including void formation and microstructural evolution. This interface depletion has been identified as a critical factor influencing the reliability of 3DIC packaging. Results emphasized the need for optimizing interconnect and interface properties to mitigate EM-induced failures, which is relevant to the development of high-power semiconductor technologies.
电迁移（EM）对小型化器件的可靠性构成了重大挑战，尤其是在高电流密度下运行的三维集成电路（3DIC）。电迁移现象源于涉及电子载流子与原子之间动量传递的原子尺度机制。在本研究中，采用高分辨率透射电子显微镜（HRTEM）来研究铜-铜接头中电迁移的原子尺度行为。分析表明，电迁移最初会沿着各种晶面诱发滑移，这些滑移会逐渐演变为沿特定取向的稳定滑移，从而主导失效过程。这种各向异性的原子传输导致铜-铜键合界面处逐渐退化，包括空洞形成和微观结构演变。这种界面损耗已被确定为影响3DIC封装可靠性的关键因素。结果强调了优化互连和界面特性以减轻电迁移诱发故障的必要性，这与高功率半导体技术的发展相关。
