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解析含铋手性有机-无机杂化半导体中的手性转移强度及结构-性质关系

Decoding Chirality Transfer Strengths and Structure-Property Relationships in Bismuth-Containing Chiral Hybrid Organic-Inorganic Semiconductors.

作者信息

Chakraborty Nilave, Ngo Tu Anh, Dominguez Montero Alexis, Liyanage Thilanka, McCandless Gregory T, Chan Julia Y, Nguyen Tho D, Whittaker-Brooks Luisa

机构信息

Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, United States.

Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602, United States.

出版信息

J Am Chem Soc. 2025 Aug 13;147(32):29431-29443. doi: 10.1021/jacs.5c09713. Epub 2025 Jul 31.

DOI:10.1021/jacs.5c09713
PMID:40742318
Abstract

Chiral hybrid organic-inorganic semiconductors (CHOIS), which integrate chiral organic cations by hydrogen-bonding interactions with anionic metal halide subunits, have recently emerged as cutting-edge materials with the potential to revolutionize energy-efficient information processing, particularly in the realms of spintronics. By harnessing the inherent chirality of organic cations, CHOIS can effectively manipulate spin dynamics, a crucial factor for enhancing the device performance in next-generation electronics. However, the challenge lies in the limited understanding of structure-property relationships, which hinders the ability to control and fine-tune the chirality within these materials. To address this gap, we developed a systematic approach that provides rational chemical control over the structural characteristics of bismuth (Bi)-containing CHOIS by incorporating chiral organic cations with adjustable hydrogen-bonding interactions. Our work, which combines in-depth crystallographic analysis with advanced spectroscopic techniques, uncovers a clear correlation between specific local structural features and enhanced chiroptical responses, as well as spin-related phenomena, such as the Rashba-Dresselhaus effects. Our findings not only pave the way for the design of advanced chiral materials with precisely tailored chiroptical and spin-related properties, but also open new frontiers for their application in optoelectronic and spintronic devices, offering unprecedented potential for future technologies.

摘要

手性有机-无机杂化半导体(CHOIS)通过氢键相互作用将手性有机阳离子与阴离子金属卤化物亚基结合在一起,最近已成为具有变革节能信息处理潜力的前沿材料,特别是在自旋电子学领域。通过利用有机阳离子固有的手性,CHOIS可以有效地操纵自旋动力学,这是提高下一代电子产品器件性能的关键因素。然而,挑战在于对结构-性能关系的理解有限,这阻碍了控制和微调这些材料中手性的能力。为了弥补这一差距,我们开发了一种系统方法,通过引入具有可调节氢键相互作用的手性有机阳离子,对含铋(Bi)的CHOIS的结构特征进行合理的化学控制。我们的工作将深入的晶体学分析与先进的光谱技术相结合,揭示了特定局部结构特征与增强的手性光学响应以及自旋相关现象(如Rashba-Dresselhaus效应)之间的明确关联。我们的发现不仅为设计具有精确定制的手性光学和自旋相关特性的先进手性材料铺平了道路,还为其在光电器件和自旋电子器件中的应用开辟了新的前沿领域,为未来技术提供了前所未有的潜力。

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