Liu Futong, Su Zihan, Cheng Zhuang, Chen Dongyang, Xu Yangze, Yan Yan, Dong Wei, Wan Liang, Zysman-Colman Eli, Lu Ping
State Key Laboratory of Supramolecular Structure and Materials, Department of Chemistry, Jilin University, Changchun, 130012, P.R. China.
Organic Semiconductor Centre, EaStCHEM School of Chemistry, University of St Andrews, St Andrews, KY16 9ST, UK.
Angew Chem Int Ed Engl. 2025 Sep 22;64(39):e202511866. doi: 10.1002/anie.202511866. Epub 2025 Aug 6.
Strategies that produce OLEDs that simultaneously achieve outstanding electroluminescence efficiency, small efficiency roll-off, good stability, and high color purity remain in strong demand. Herein, we report how judicious decoration of a benzochalcogenophene onto the BCzBN core leads to an acceleration of reverse intersystem crossing (k) without sacrificing either color fidelity and photoluminescence quantum yield (Φ). Compared with BCzBN, the k of BN-S and BN-Se are accelerated to 2.5 × 10 and 7.2 × 10 s from 1.4 × 10 s, each with near-unity Φs. BN-S and BN-Se show narrowband emission at 483 nm (FWHM of 22 nm) and 485 nm (FWHM of 22 nm). The corresponding non-sensitized OLEDs using BN-S and BN-Se exhibited record-breaking maximum external quantum efficiency (EQE) of 43.1 and 36.9%, without any external light extraction techniques. Furthermore, the BN-Se-based OLED showed ultralow efficiency roll-off, with EQEs remaining at 36.7 and 31.8% at 100 and 1000 cd m, respectively. These emitters do not easily suffer from aggregation-caused quenching. Even at 12 wt% doping, the EQE of the OLEDs with BN-S and BN-Se were 36.7 and 36.4%, respectively, with mild efficiency roll-off (EQEs at 1000 cd m of 19.1 and 30.8%, respectively), and nearly unchanged electroluminescence spectra.
能够同时实现出色的电致发光效率、小的效率滚降、良好的稳定性和高色纯度的有机发光二极管(OLED)制备策略仍然有着强烈的需求。在此,我们报告了如何在BCzBN核上巧妙地修饰苯并硫属杂环戊二烯,从而在不牺牲颜色保真度和光致发光量子产率(Φ)的情况下加速反向系间窜越(k)。与BCzBN相比,BN-S和BN-Se的k从1.4×10⁶ s⁻¹加速到2.5×10⁷和7.2×10⁷ s⁻¹,且各自的Φ接近单位值。BN-S和BN-Se在483 nm(半高宽为22 nm)和485 nm(半高宽为22 nm)处呈现窄带发射。使用BN-S和BN-Se的相应非敏化OLED在没有任何外部光提取技术的情况下表现出创纪录的最大外量子效率(EQE),分别为43.1%和36.9%。此外,基于BN-Se的OLED显示出超低的效率滚降,在100和1000 cd m⁻²时EQE分别保持在36.7%和31.8%。这些发光体不容易受到聚集诱导猝灭的影响。即使在12 wt%的掺杂浓度下,含有BN-S和BN-Se的OLED的EQE分别为36.7%和36.4%,效率滚降较温和(在1000 cd m⁻²时EQE分别为19.1%和30.8%),并且电致发光光谱几乎不变。