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二维激子在由近端铁电畴壁诱导的工程一维势中的强量子限制

Strong Quantum Confinement of 2D Excitons in an Engineered 1D Potential Induced by Proximal Ferroelectric Domain Walls.

作者信息

Soubelet Pedro, Tong Yao, Astaburuaga Hernandez Asier, Ji Peirui, Gallo Katia, Stier Andreas V, Finley Jonathan J

机构信息

Walter Schottky Institut and TUM School of Natural Sciences, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.

Department of Physics, KTH Royal Institute of Technology, Roslagstullsbacken 21, Stockholm SE-10691, Sweden.

出版信息

Nano Lett. 2025 Aug 27;25(34):12842-12850. doi: 10.1021/acs.nanolett.5c02438. Epub 2025 Aug 12.

Abstract

We investigate the confinement of neutral excitons in a one-dimensional (1D) potential engineered by proximizing hexagonal boron nitride (hBN)-encapsulated monolayer MoSe to ferroelectric domain walls (DWs) in periodically poled LiNbO. Our device exploits the nanometer scale in-plane electric field gradient at the DW to induce dipolar exciton confinement via the DC Stark effect. Spatially resolved photoluminescence spectroscopy reveals the emergence of narrow emission lines redshifted from the MoSe neutral exciton by up to ∼100 meV, depending on the sample structure. The spatial distribution, excitation energy response, and polarization properties of the emission are consistent with the signatures of 1D-confined excitons. The large electric-field gradients accessible via proximal ferroelectric systems open up new avenues for the creation of robust quantum-confined excitons in atomically thin materials and their heterostructures.

摘要

我们研究了通过将六方氮化硼(hBN)封装的单层MoSe接近周期性极化的LiNbO₃中的铁电畴壁(DWs)来设计一维(1D)势中中性激子的限制情况。我们的器件利用DW处的纳米级面内电场梯度,通过直流斯塔克效应诱导偶极激子限制。空间分辨光致发光光谱揭示了窄发射线的出现,这些发射线相对于MoSe中性激子发生了高达约100 meV的红移,这取决于样品结构。发射的空间分布、激发能量响应和极化特性与一维限制激子的特征一致。通过近端铁电系统可获得的大电场梯度为在原子级薄材料及其异质结构中创建稳健的量子限制激子开辟了新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/598e/12395486/5ae1556718a8/nl5c02438_0001.jpg

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