Li Weizhuo, Gu Run, Wang Xuan, Wang Chenglong, Qu Mingzhe, Wang Xiaoming, Shi Jiahao
School of Intelligence and Civil Engineering, Harbin University, Harbin 150076, China.
Key Laboratory of Engineering Dielectrics and Application, Ministry of Education Harbin University of Science and Technology, Harbin 150080, China.
Polymers (Basel). 2025 Aug 3;17(15):2133. doi: 10.3390/polym17152133.
With the rapid development of information technology and semiconductor technology, the iteration speed of electronic devices has accelerated in an unprecedented manner, and the market demand for miniaturized, highly integrated, and highly intelligent devices continues to rise. But when these electronic devices operate at high power, the electronic components generate a large amount of integrated heat. Due to the limitations of existing heat dissipation channels, the current heat dissipation performance of electronic packaging materials is struggling to meet practical needs, resulting in heat accumulation and high temperatures inside the equipment, seriously affecting operational stability. For electronic devices that require high energy density and fast signal transmission, improving the heat dissipation capability of electronic packaging materials can significantly enhance their application prospects. In order to improve the thermal conductivity of composite materials, hexagonal boron nitride (h-BN) was selected as the thermal filling material in this paper. The BMI resin was structurally modified through molecular structure design. The results showed that the micro-branched structure and h-BN synergistically improved the thermal conductivity and insulation performance of the composite material, with a thermal conductivity coefficient of 1.51 W/(m·K) and a significant improvement in insulation performance. The core mechanism is the optimization of the dispersion state of h-BN filler in the matrix resin through the free volume in the micro-branched structure, which improves the thermal conductivity of the composite material while maintaining high insulation.
随着信息技术和半导体技术的飞速发展,电子设备的迭代速度空前加快,市场对小型化、高度集成化和高度智能化设备的需求持续增长。但这些电子设备在高功率运行时,电子元件会产生大量集成热量。由于现有散热渠道的限制,电子封装材料目前的散热性能难以满足实际需求,导致设备内部热量积聚和温度过高,严重影响运行稳定性。对于需要高能量密度和快速信号传输的电子设备,提高电子封装材料的散热能力可显著提升其应用前景。为提高复合材料的热导率,本文选用六方氮化硼(h-BN)作为热填充材料。通过分子结构设计对BMI树脂进行结构改性。结果表明,微支化结构与h-BN协同提高了复合材料的热导率和绝缘性能,热导率系数达到1.51W/(m·K),绝缘性能有显著提升。核心机制是通过微支化结构中的自由体积优化h-BN填料在基体树脂中的分散状态,在保持高绝缘性的同时提高了复合材料的热导率。