Taufertshöfer Nicolai, Burri Corinna, Venturini Rok, Giannopoulos Iason, Ekahana Sandy Adhitia, Della Valle Enrico, Mraz Anže, Vaskivskyi Yevhenii, Lipič Jan, Barinov Alexei, Kazazis Dimitrios, Ekinci Yasin, Mihailovic Dragan, Gerber Simon
PSI Center for Photon Science, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland.
Institute for Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland.
Nanoscale. 2025 Aug 28;17(34):19957-19965. doi: 10.1039/d5nr02125a.
In-operando characterization of van der Waals (vdW) devices using surface-sensitive methods provides critical insights into phase transitions and correlated electronic states. Yet, integrating vdW materials in functional devices while maintaining pristine surfaces is a key challenge for combined transport and surface-sensitive experiments. Conventional lithographic techniques introduce surface contamination, limiting the applicability of state-of-the-art spectroscopic probes. We present a stencil lithography-based approach for fabricating vdW devices, producing micron-scale electrical contacts, and exfoliation in ultra-high vacuum. The resist-free patterning method utilizes a shadow mask to define electrical contacts and yields thin flakes down to the single-layer regime gold-assisted exfoliation. As a demonstration, we fabricate devices from 1T-TaS flakes, achieving reliable contacts for application of electrical pulses and resistance measurements, as well as clean surfaces allowing for angle-resolved photoemission spectroscopy. The approach provides a platform for studying the electronic properties of vdW systems with surface-sensitive probes in well-defined device geometries.
使用表面敏感方法对范德华(vdW)器件进行原位表征,能为相变和相关电子态提供关键见解。然而,在功能器件中集成vdW材料并同时保持原始表面,对于结合输运和表面敏感实验来说是一项关键挑战。传统光刻技术会引入表面污染,限制了最先进光谱探针的适用性。我们提出一种基于模板光刻的方法,用于制造vdW器件、制作微米级电接触以及在超高真空下进行剥离。这种无抗蚀剂图案化方法利用荫罩来定义电接触,并通过金辅助剥离产生单层及以下的薄片。作为演示,我们用1T-TaS薄片制造器件,实现了用于电脉冲施加和电阻测量的可靠接触,以及可进行角分辨光电子能谱的清洁表面。该方法为在明确的器件几何结构中使用表面敏感探针研究vdW系统的电子特性提供了一个平台。