Cheng Jian, Zhou Wen-Rui, Yao Wen-Dong, Xu Hai-Ping, Liu Wenlong, Guo Sheng-Ping
Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China.
School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China.
Inorg Chem. 2025 Sep 8;64(35):17647-17652. doi: 10.1021/acs.inorgchem.5c03385. Epub 2025 Aug 22.
Simultaneously achieving a large second-harmonic generation (SHG) response and high laser-induced damage threshold (LIDT) remains a critical scientific challenge in mid-infrared nonlinear optical (NLO) materials. Computational studies demonstrate that AlSe exhibits a large NLO coefficient and an ultrawide bandgap among selenides. However, its instability excludes the application potential, which attracts us to design its derivatives. Novel AlGaSe can be obtained via a chemical substitution strategy when taking AlSe as the template. AlGaSe crystallizes in the noncentrosymmetric space group , isostructural with AlSe, and its three-dimensional diamond-like structure consists of two distinct MSe (M = Al/Ga) tetrahedral units. AlGaSe exhibits an NLO effect of 1.7 × AlSe and 0.7 × AgGaS (AGS) at 2.1 μm and an LIDT of 4.3 × AGS while maintaining a relatively wide bandgap of 2.46 eV among selenides. Theoretical calculations and structural analyses reveal that the NLO performances of AlSe and AlGaSe primarily originate from the synergistic interaction between two types of tetrahedral units. The enhanced SHG effect in AlGaSe is attributed to the more distorted tetrahedra, distinct orientation differences among them, and closer packing of them. This work provides an effective strategy for designing high-performance NLO materials.
在中红外非线性光学(NLO)材料中,同时实现大的二次谐波产生(SHG)响应和高的激光诱导损伤阈值(LIDT)仍然是一项关键的科学挑战。计算研究表明,在硒化物中,AlSe具有大的NLO系数和超宽带隙。然而,其不稳定性排除了应用潜力,这促使我们设计其衍生物。以AlSe为模板,通过化学取代策略可获得新型AlGaSe。AlGaSe结晶于非中心对称空间群,与AlSe同构,其三维类金刚石结构由两个不同的MSe(M = Al/Ga)四面体单元组成。在2.1μm处,AlGaSe的NLO效应是AlSe的1.7倍、AgGaS(AGS)的0.7倍,其LIDT是AGS的4.3倍,同时在硒化物中保持相对较宽的2.46eV带隙。理论计算和结构分析表明,AlSe和AlGaSe的NLO性能主要源于两种四面体单元之间的协同相互作用。AlGaSe中增强的SHG效应归因于四面体的更大畸变、它们之间明显的取向差异以及更紧密的堆积。这项工作为设计高性能NLO材料提供了一种有效策略。