Tang Chunlan, Yao Aoge, Xing Wenhao, Tang Jian, Kang Lei, Yin Wenlong, Wu Jieyun, Kang Bin
Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, P.R. China.
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. China.
Dalton Trans. 2025 Jul 15;54(28):10956-10960. doi: 10.1039/d5dt01124h.
Infrared nonlinear optical (IR NLO) materials play a pivotal role in laser technology, yet achieving a balance between a wide band gap and a strong second-harmonic generation (SHG) response remains challenging. Here, we report the rational design and synthesis of ZnHgPS, a novel diamond-like (DL) chalcogenide developed through a partial congener substitution strategy. The precise partial substitution of Zn for Hg in the normal [Hg1S] tetrahedra, while preserving the structurally distorted [Hg2S] units critical for NLO effects, simultaneously enhances the band gap to 2.91 eV (compared to 2.77 eV in the parent compound HgPS) and maintains a strong SHG response of 1.5 × AgGaS. First-principles calculations elucidate the structure-property relationship, showing that the preserved [Hg2S] motifs dominate the SHG effect, while the introduction of Zn enlarges the band gap. This work not only presents an exceptional IR NLO candidate overcoming the band gap-NLO efficiency paradox, but also establishes a general design strategy for developing high-performance IR NLO materials through targeted structural engineering.