Brown W J, Babb T L, Soper H V, Lieb J P, Ottino C A, Crandall P H
J Neurosurg. 1977 Sep;47(3):366-79. doi: 10.3171/jns.1977.47.3.0366.
Light and electron microscopic analyses were carried out on the stimulated and unstimulated paravermal cortices of six rhesus monkeys that had electrodes implanted on their cerebella for 2 months. The electrodes and the stimulation regime (10 p.p.s.: 8 min on, 8 min off) were similar to those used to stimulate the human cerebellum for treatment of certain neurological disorders. Mere presence of the electrode array in the posterior fossa for 2 months resulted in some meningeal thickening, attenuation of the molecular layer, and loss of Purkinje cells immediately beneath the electrode array. There was no evidence of scarring. After 205 hours of stimulation (7.35 X 10(6) pulses) over 18 days, a charge of 0.5 muC/ph or estimated charge density of 7.4 muC/sq cm/ph resulted in no damage to the cerebellum attributable to electrical stimulation per se. Such a charge/phase is about five times the threshold for evocation of cerebellar efferent activity, and might be considered "safe" for stimulation of human cerebellum. Charge density/phase and charge/phase were directly related to increased cerebellar injury in the six other cerebellar cortices stimulated. Leptomeningeal thickening increased with increased charge density. Injury included severe molecular layer attenuation, ongoing destruction of Purkinje cells, gliosis, ongoing degeneration of myelinated axons, collagen intrusion, and increased levels of local polysaccharides. In all cases, even with damage that destroyed all conducting elements beneath the electrodes, there was no damage further than 1 to 2 mm from the edges of the electrode arrays.
对六只恒河猴的蚓旁皮质进行了光镜和电镜分析,这些猴子的小脑已植入电极两个月。电极及刺激方案(10次/秒:开8分钟,关8分钟)与用于刺激人类小脑以治疗某些神经疾病的电极及方案相似。电极阵列在后颅窝仅存在两个月就导致了一些脑膜增厚、分子层变薄以及电极阵列正下方的浦肯野细胞丢失。没有瘢痕形成的证据。在18天内进行205小时(7.35×10⁶次脉冲)的刺激后,每相位0.5微库仑的电荷量或估计的电荷密度7.4微库仑/平方厘米/相位,并未因电刺激本身对小脑造成损伤。这样的电荷/相位约为诱发小脑传出活动阈值的五倍,可被认为对刺激人类小脑是“安全的”。电荷密度/相位和电荷/相位与另外六个受刺激的小脑皮质中增加的小脑损伤直接相关。软脑膜增厚随电荷密度增加而加重。损伤包括严重的分子层变薄、浦肯野细胞持续破坏、胶质增生、有髓轴突持续变性、胶原侵入以及局部多糖水平升高。在所有情况下,即使损伤破坏了电极下方的所有传导元件,损伤范围也未超过距电极阵列边缘1至2毫米。