Zhao Dongyang, Chen Yan, Hu Tao, Cao Hechun, Zhao Xuefeng, Jia Yu, Wang Xudong, Shen Hong, Yang Jing, Zhang Yuanyuan, Tang Xiaodong, Bai Wei, Wang Jianlu, Chu Junhao
Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.
Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China.
Nat Commun. 2025 Aug 23;16(1):7859. doi: 10.1038/s41467-025-62383-9.
Avalanche photodiodes are crucial in emerging weak light signal detection fields. However, most avalanche photodiodes either suffer from relatively high breakdown voltage or relatively low gain, impairing the advantages of avalanche multiplication. Herein, we report the bilateral Geiger mode avalanche in two-dimensional Graphene/InSe/Cr asymmetrical Schottky junction. A high gain of 6.3 × 10 is yielded at low breakdown voltage down to 1.4 V approaching InSe's threshold limit of bandgap. In addition to the separated carrier injection region and avalanche multiplication region, a positive temperature coefficient of the ionization rate and a very low critical electric field (11.5 kV cm) are demonstrated, leading to the nice performance. Such device architecture also enables low dark current and noise equivalent power, showing weak light signals detection ability down to around 35 photons at room temperature. This study provides alternative strategies for developing energy-efficient and high-gain avalanche photodiodes.
雪崩光电二极管在新兴的弱光信号检测领域至关重要。然而，大多数雪崩光电二极管要么具有相对较高的击穿电压，要么具有相对较低的增益，这削弱了雪崩倍增的优势。在此，我们报道了二维石墨烯/硒化铟/铬不对称肖特基结中的双边盖革模式雪崩。在低至1.4 V的击穿电压下实现了6.3×10的高增益，接近硒化铟的带隙阈值极限。除了分离的载流子注入区和雪崩倍增区外，还展示了电离率的正温度系数和非常低的临界电场（11.5 kV/cm），从而带来了良好的性能。这种器件结构还能实现低暗电流和噪声等效功率，在室温下显示出低至约35个光子的弱光信号检测能力。本研究为开发节能型高增益雪崩光电二极管提供了替代策略。
