Khanmohammadi Chenab Karim, Zarifi Fardad, Mahmoudi Qashqay Samaneh, Zamani-Meymian Mohammad-Reza
Department of Chemistry, Iran University of Science and Technology Tehran P. O. Box 16846-13114 Iran
Department of Physics, Iran University of Science and Technology Tehran P. O. Box 16846-13114 Iran
Nanoscale Adv. 2025 Jul 28. doi: 10.1039/d5na00450k.
Understanding the mechanism of electron transfer in organometallic dielectric materials has been a major focus for capacitor applications. The present study reports four 8-hydroxyquinoline-based organometallic complexes and uses them as a dielectric layer for capacitors to analyze their capacitance (C), real and imaginary dielectric constants (' and ''), loss factor (tan ), dc and ac conductivity ( and ), as well as the influence of morphology on their dielectric and electrical properties. These components were prepared using radio frequency (RF)-sputtering deposition and characterized by FESEM and LCRmetry methods. Molecular analysis of the dielectrics was undertaken using XRD, EDX, DRS, H and C NMR, Raman, FT-IR and PL spectroscopy techniques. Based on the results, an -dependent damping of C was observed for AlQ, ZnQ and CdQ dielectrics, while ' remained unchanged, and the '' and tan of the dielectrics experienced a decrease and an increase and , respectively. The value of indicated an upward trend , which is linked to polarization of the nanowire and nanosheet dielectric layers. From the molecular aspect, symmetric structures inhibit aggregation of charge carriers and dipole contributions as well as interfacial polarization due to intramolecular charge transfer (ICT), metal-to-ligand charge transfer (MLCT) and ligand-to-metal charge transfer (LMCT) mechanisms. Finally, this research highlights the dielectric properties of organometallic materials to clarify the electron transfer (ET) mechanism for designing materials for dielectric layers.
理解有机金属介电材料中的电子转移机制一直是电容器应用的主要研究重点。本研究报告了四种基于8-羟基喹啉的有机金属配合物,并将它们用作电容器的介电层,以分析其电容(C)、实部和虚部介电常数(ε'和ε'')、损耗因子(tanδ)、直流和交流电导率(σdc和σac),以及形态对其介电和电学性能的影响。这些组件采用射频(RF)溅射沉积制备,并通过场发射扫描电子显微镜(FESEM)和LCR测量方法进行表征。使用X射线衍射(XRD)、能量散射X射线光谱(EDX)、漫反射光谱(DRS)、氢和碳核磁共振(1H和13C NMR)、拉曼光谱、傅里叶变换红外光谱(FT-IR)和光致发光光谱(PL)技术对介电材料进行分子分析。基于这些结果,观察到AlQ、ZnQ和CdQ介电材料的电容C随频率呈依赖性衰减,而ε'保持不变,介电材料的ε''和tanδ分别出现下降和上升。σdc的值呈上升趋势,这与纳米线和纳米片介电层的极化有关。从分子层面来看,对称结构抑制了电荷载流子的聚集、偶极贡献以及由于分子内电荷转移(ICT)、金属-配体电荷转移(MLCT)和配体-金属电荷转移(LMCT)机制引起的界面极化。最后,本研究突出了有机金属材料的介电性能,以阐明用于设计介电层材料的电子转移(ET)机制。