Fu Yu, Shan Guangbao, Zhang Xiaofei, Zhao Lizheng, Yang Yintang
School of Microelectronics, Xidian University, Xi'an 710126, China.
China Aerospace Institute of Standardization, Beijing 100071, China.
Micromachines (Basel). 2025 Aug 4;16(8):908. doi: 10.3390/mi16080908.
The rapid development of high-power-density semiconductor devices has rendered conventional thermal management techniques inadequate for handling their extreme heat fluxes. This manuscript presents and implements an embedded microchannel cooling solution for such devices. By directly integrating micropillar arrays within the near-junction region of the substrate, efficient forced convection and flow boiling mechanisms are achieved. Finite element analysis was first employed to conduct thermo-fluid-structure simulations of micropillar arrays with different geometries. Subsequently, based on our simulation results, a complete multilayer microstructure fabrication process was developed and integrated, including critical steps such as deep reactive ion etching (DRIE), surface hydrophilic/hydrophobic functionalization, and gold-stannum (Au-Sn) eutectic bonding. Finally, an experimental test platform was established to systematically evaluate the thermal performance of the fabricated devices under heat fluxes of up to 1200 W/cm. Our experimental results demonstrate that this solution effectively maintains the device operating temperature at 46.7 °C, achieving a mere 27.9 K temperature rise and exhibiting exceptional thermal management capabilities. This manuscript provides a feasible, efficient technical pathway for addressing extreme heat dissipation challenges in next-generation electronic devices, while offering notable references in structural design, micro/nanofabrication, and experimental validation for related fields.
高功率密度半导体器件的快速发展使得传统热管理技术不足以应对其极高的热流。本文提出并实施了一种针对此类器件的嵌入式微通道冷却解决方案。通过在衬底的近结区域直接集成微柱阵列,实现了高效的强制对流和流动沸腾机制。首先采用有限元分析对不同几何形状的微柱阵列进行热-流-固模拟。随后,基于模拟结果,开发并集成了完整的多层微结构制造工艺,包括深反应离子刻蚀(DRIE)、表面亲水/疏水功能化以及金锡(Au-Sn)共晶键合等关键步骤。最后,建立了一个实验测试平台,系统地评估所制造器件在高达1200 W/cm热流下的热性能。我们的实验结果表明,该解决方案有效地将器件工作温度维持在46.7℃,仅产生27.9 K的温度升高,展现出卓越的热管理能力。本文为解决下一代电子器件中的极端散热挑战提供了一条可行、高效的技术途径,同时为相关领域的结构设计、微纳制造和实验验证提供了重要参考。