Duan Xijian, Zhang Wenda, Hao Junjie, Liu Ronghuan, Xu Bing, Jin Lei, Samuelson Lars, Sun Xiao Wei
Institute of Nanoscience and Applications and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Shenzhen Key Laboratory for Deep Subwavelength Scale Photonics, Southern University of Science and Technology, Shenzhen 518055, China.
Nano Lett. 2025 Sep 10;25(36):13539-13548. doi: 10.1021/acs.nanolett.5c03042. Epub 2025 Aug 29.
InP quantum dots have emerged as a promising ecofriendly alternative to cadmium-based QDs for next-generation display applications. However, red-emitting InP QDs synthesized via aminophosphine precursors still suffer from broad emission spectra and limited stability. In this study, we present a strain-engineered InP/ZnSe/ZnSeS/ZnS QD structure featuring a gradient alloyed ZnSeS shell that effectively mitigates lattice mismatch, reduces strain accumulation, and enhances shell uniformity. Through systematic analysis, we elucidate the strain distribution profiles across different shell architectures and the corresponding defect types induced by strain. This approach enables the controlled growth of a thick ZnS shell, improving passivation and minimizing nonradiative recombination. As a result, the optimized QDs exhibit a narrow full width at half-maximum of 45 nm, a high photoluminescence quantum yield of ≥80%, and significantly enhanced photochemical stability. This work highlights the critical role of strain management in achieving high-performance InP QDs for practical applications.
对于下一代显示应用而言，磷化铟量子点已成为一种有前景的、对环境友好的镉基量子点替代物。然而，通过氨基膦前驱体合成的发红光磷化铟量子点仍存在发射光谱宽和稳定性有限的问题。在本研究中，我们展示了一种应变工程化的磷化铟/硒化锌/硒硫化锌/硫化锌量子点结构，其具有梯度合金化的硒硫化锌壳层，可有效减轻晶格失配、减少应变积累并提高壳层均匀性。通过系统分析，我们阐明了不同壳层结构中的应变分布概况以及由应变引起的相应缺陷类型。这种方法能够实现厚硫化锌壳层的可控生长，改善钝化效果并使非辐射复合最小化。结果，优化后的量子点半高宽窄至45纳米，光致发光量子产率高达≥80%，并且光化学稳定性显著增强。这项工作突出了应变管理在实现用于实际应用的高性能磷化铟量子点方面的关键作用。
