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设计具有可变陈数的霍尔晶体。

Designing Hall crystals with variable Chern numbers.

作者信息

Paul Nisarga, Shavit Gal, Fu Liang

机构信息

Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.

Department of Physics and Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, USA.

出版信息

Nat Commun. 2025 Aug 29;16(1):8103. doi: 10.1038/s41467-025-63320-6.

Abstract

Topological electronic crystals are electron crystals in which spontaneously broken translation symmetry coexists with or gives rise to a nontrivial topological response. Here, we introduce a novel platform and analytical theory for realizing interaction-induced Hall crystals, a class of topological electronic crystals, with various Chern numbers C. The platform consists of a two-dimensional semiconductor subjected to an out-of-plane magnetic field and one-dimensional modulation, which can be realized by moiré or dielectric engineering. Interactions drive the system to spontaneously break the residual translational symmetry, resulting in anisotropic Hall crystals with various C, including ∣C∣ > 1, tunable by field. Remarkably, these persist across continuous ranges of filling and field, and the global phase diagram can be understood in a unified manner.

摘要

拓扑电子晶体是一种电子晶体,其中自发破缺的平移对称性与非平凡拓扑响应共存或导致非平凡拓扑响应。在此,我们引入了一个新颖的平台和分析理论,用于实现具有各种陈数C的相互作用诱导的霍尔晶体,这是一类拓扑电子晶体。该平台由一个二维半导体组成,该半导体受到面外磁场和一维调制,这可以通过莫尔或介电工程来实现。相互作用驱使系统自发地打破剩余的平移对称性,从而产生具有各种C值(包括|C|>1)的各向异性霍尔晶体,这些C值可通过场进行调节。值得注意的是,这些特性在连续的填充和场范围内持续存在,并且全局相图可以以统一的方式理解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/71ef/12397358/6d814506e56a/41467_2025_63320_Fig1_HTML.jpg

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