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用于有机发光二极管应用的Alq和Gaq衍生物的密度泛函理论分析:结构优化与电子性质

Density Functional Theory Analysis of Alq and Gaq Derivatives: Structural Optimization and Electronic Properties for Organic Light-Emitting Diode Applications.

作者信息

Tsai Huai-Wen, Tai Chung-Chieh, Li Wen-Ken

机构信息

Department of Electrical Engineering, Chien Hsin University of Science and Technology, Taoyuan 320678, Taiwan.

Department of Semiconductor and Electro-Optical Technology, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan.

出版信息

ACS Omega. 2025 Aug 23;10(35):39724-39735. doi: 10.1021/acsomega.5c03335. eCollection 2025 Sep 9.

DOI:10.1021/acsomega.5c03335
PMID:40949239
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12423827/
Abstract

This study employs computational quantum mechanics to investigate the impact of molecular and electronic structures on the optical properties of organic light-emitting diodes (OLEDs). First-principles calculations based on density functional theory (DFT) and time-dependent density functional theory (TD-DFT) were used to analyze Mq3 and Mq2p (M = Al or Ga) and their derivatives, where one quinoline ligand was replaced with picolinate and CH/N substitutions were introduced in the qa and qc ligands. The molecular structures were optimized using time-independent DFT, while electronic excitation energies were determined using time-dependent DFT. Based on the optimized ground-state structures, key molecular properties, including bond length, bond angle, dipole moment, band gap, electron cloud energies, ionization energy, electron affinity, and reorganization energy, were systematically computed. Additionally, absorption and emission spectra were examined, revealing tunable Stokes shifts. The results indicate that Gaq derivatives exhibit superior structural stability and improved hole-blocking and electron injection capabilities compared to Alq. These findings offer valuable guidance for designing superior OLED materials, potentially enhancing light emission and electronic transport.

摘要

本研究采用计算量子力学来研究分子和电子结构对有机发光二极管(OLED)光学性质的影响。基于密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)的第一性原理计算被用于分析Mq3和Mq2p(M = Al或Ga)及其衍生物,其中一个喹啉配体被吡啶甲酸取代,并且在qa和qc配体中引入了CH/N取代。使用与时间无关的DFT对分子结构进行优化,同时使用含时DFT确定电子激发能。基于优化后的基态结构,系统地计算了包括键长、键角、偶极矩、带隙、电子云能量、电离能、电子亲和能和重组能在内的关键分子性质。此外,还研究了吸收光谱和发射光谱,揭示了可调谐的斯托克斯位移。结果表明,与Alq相比,Gaq衍生物表现出优异的结构稳定性以及改善的空穴阻挡和电子注入能力。这些发现为设计优异的OLED材料提供了有价值的指导,有可能增强发光和电子传输。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5c35/12423827/c1dd315d7e04/ao5c03335_0008.jpg
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