Zhu Lewen, Lan Zhiqiang, Guo Yingyu, Li Danni, Xi Lin, Zhang Huiping, Jin Zuanming
Shanghai Key Lab of Modern Optical System, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China.
Anjieli Electronic Technology (Suzhou) Co., Ltd., No. 188, Lushan Road, Suzhou 215000, China.
Nanomaterials (Basel). 2025 Sep 9;15(18):1386. doi: 10.3390/nano15181386.
The electronic transport behavior in ferromagnetic thin films critically dictates the functionality and efficiency of devices in spintronics and modern materials science. This work characterizes terahertz (THz) responses and nonlinear conductivities of Fe ultrathin films under high-field THz excitation. We demonstrated that different nonlinearities are present for two different thickness samples. For a 2 nm thick Fe film, as the peak THz electric field was increased to 369 kV/cm, the THz transmittance of Fe films generally decreased. However, for the 4 nm thick Fe film, the THz transmittance is almost field strength independent. This result is correlated with the conductivity variations induced by carrier transport processes. The real part of the complex conductivity for the 2 nm thick film increased significantly with the THz electric field, while the 4 nm thick film showed negligible dependence. In addition, we extracted the frequency-domain complex conductivity of the Fe thin films and used the Drude or Drude-Smith model to explain the distinct behaviors between the two thickness samples under intense THz fields, mainly associated with the surface morphology. This work aims to elucidate the transport properties of Fe films in the THz frequency range. Our findings lay a crucial foundation for the design and development of future high-performance THz spintronic functional devices.
铁磁薄膜中的电子输运行为严重决定了自旋电子学和现代材料科学中器件的功能和效率。这项工作表征了高场太赫兹(THz)激发下铁超薄膜的太赫兹响应和非线性电导率。我们证明了两种不同厚度的样品存在不同的非线性。对于2纳米厚的铁膜,随着太赫兹电场峰值增加到369 kV/cm,铁膜的太赫兹透过率总体下降。然而,对于4纳米厚的铁膜,太赫兹透过率几乎与场强无关。这一结果与载流子输运过程引起的电导率变化相关。2纳米厚薄膜复电导率的实部随太赫兹电场显著增加,而4纳米厚薄膜的依赖性可忽略不计。此外,我们提取了铁薄膜的频域复电导率,并使用德鲁德或德鲁德 - 史密斯模型来解释在强太赫兹场下两个厚度样品之间的不同行为,这主要与表面形态有关。这项工作旨在阐明太赫兹频率范围内铁膜的输运特性。我们的发现为未来高性能太赫兹自旋电子功能器件的设计和开发奠定了关键基础。