Žugec Petar, Karlušić Marko
Department of Physics, Faculty of Science, University of Zagreb, Bijenička Cesta 32, 10000 Zagreb, Croatia.
Ruđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, Croatia.
Materials (Basel). 2025 Sep 9;18(18):4230. doi: 10.3390/ma18184230.
Material changes made through the energy deposition upon the swift heavy ion impact can be strongly influenced by size effects in the case of nanomaterials. In particular, the amount of energy available for material modification can be significantly reduced through dissipation via electron emission. Here, this open problem is studied using the Geant4 code with the MicroElectronics package. The impact of silicon ions with various kinetic energies (in a range between 2.8 MeV and 280 MeV) is simulated in silicon nanomaterials (nanocubes, nanowires and thin films) and on the surface of silicon. The dimensions of all studied geometries were between 5 and 100 nm. The presented results indicate that the amount of dissipated energy can be significant and should be considered when modelling changes in nanomaterials induced by swift heavy ion impacts, because primary electrons can easily escape from nanomaterials.
在纳米材料的情况下，通过快速重离子撞击时的能量沉积所产生的材料变化会受到尺寸效应的强烈影响。特别是，可用于材料改性的能量数量会因电子发射导致的能量耗散而显著减少。在此，使用带有微电子学包的Geant4代码来研究这个开放性问题。模拟了具有各种动能（在2.8兆电子伏特至280兆电子伏特范围内）的硅离子对硅纳米材料（纳米立方体、纳米线和薄膜）以及硅表面的撞击。所有研究几何结构的尺寸在5至100纳米之间。所呈现的结果表明，耗散能量的数量可能很大，在对由快速重离子撞击引起的纳米材料变化进行建模时应予以考虑，因为初级电子能够轻易地从纳米材料中逸出。
