Margolis H C, Varughese K, Moreno E C
Calcif Tissue Int. 1982;34 Suppl 2:S33-40.
The effect of fluoride on the kinetics of crystal growth of calcium apatites was studied using seed crystals of hydroxyapatite coated with PRP-3, a proline-rich phosphoprotein salivary inhibitor of crystal growth. Initial precipitation rates in the presence of PRP-3, under conditions of partial inhibition, were enhanced by fluoride, effectively counteracting the inhibitory activity of the macromolecule. This rate enhancement is related to an increase in the precipitation driving force, i.e., the degree of supersaturation with respect to the precipitating phase; in this case a fluoridated hydroxyapatite. The growth of this phase takes place at the uncovered crystal growth sites which have been previously shown to be the same sites as the adsorption sites for the protein inhibitors. Explanations based on fluoride activation of secondary crystal growth sites and on the displacement of adsorbed inhibitor by fluoride are not substantiated by the present results. It has been demonstrated that under conditions of maximum coverage of available crystal growth sites by PRP-3, resulting in no apparent crystal growth, measurable crystal growth is observed upon the addition of fluoride (1 ppm). This phenomenon is best explained by the fact that at maximum PRP-3 coverage, a small number (16%) of crystal growth sites remain uncovered, which support an unmeasurable rate of crystal growth. Upon the addition of fluoride, this rate is significantly enhanced. It is suggested that the fraction of uncovered growth sites is related to steric interactions of the PRP-3 molecule in the adsorbed state. Overall, the results presented suggest that fluoride can accelerate crystal growth in an environment such as the enamel surface where the acquired pellicle is formed.
利用富含脯氨酸的磷蛋白唾液晶体生长抑制剂PRP - 3包被的羟基磷灰石籽晶,研究了氟对钙磷灰石晶体生长动力学的影响。在部分抑制条件下,PRP - 3存在时的初始沉淀速率因氟而提高,有效抵消了大分子的抑制活性。这种速率提高与沉淀驱动力的增加有关,即相对于沉淀相的过饱和度;在这种情况下是含氟羟基磷灰石。该相的生长发生在未覆盖的晶体生长位点,先前已证明这些位点与蛋白质抑制剂的吸附位点相同。基于氟对二次晶体生长位点的活化以及氟取代吸附抑制剂的解释未得到本研究结果的证实。已经证明,在PRP - 3对可用晶体生长位点的最大覆盖条件下,导致没有明显的晶体生长,加入氟(1 ppm)后可观察到可测量的晶体生长。这种现象最好用以下事实来解释:在PRP - 3最大覆盖时,仍有少量(16%)晶体生长位点未被覆盖,这些位点支持不可测量的晶体生长速率。加入氟后,该速率显著提高。有人认为,未覆盖生长位点的比例与吸附状态下PRP - 3分子的空间相互作用有关。总体而言,所呈现的结果表明,在诸如形成获得性薄膜的牙釉质表面这样的环境中,氟可以加速晶体生长。