Lewin A A, Serago C F, Schwade J G, Abitbol A A, Margolis S C
Int J Radiat Oncol Biol Phys. 1984 Oct;10(10):1967-9. doi: 10.1016/0360-3016(84)90279-7.
New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmias which may result from such damage.
新型多程控起搏器经常采用互补金属氧化物半导体（CMOS）。与旧款起搏器中使用的半导体电路相比，这种电路似乎对电离辐射的影响更为敏感。本文描述了一例CMOS设备中因辐射导致起搏器失控的病例。鉴于此以及其他近期关于放射治疗导致CMOS型起搏器故障的报告，这些起搏器不应接受辐射。如有必要，可在进行放射治疗前对起搏器进行屏蔽或将其移至可屏蔽的位置。这样做是为了防止损坏CMOS电路以及由此可能导致的危及生命的心律失常。
