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两性霉素B对美西螈胆囊电特性的影响:细胞内微电极研究

Effects of amphotericin b on the electrical properties of Necturus gallbladder: intracellular microelectrode studies.

作者信息

Reuss L

出版信息

J Membr Biol. 1978 Jun 22;41(1):65-86. doi: 10.1007/BF01873340.

Abstract

Intracellular microelectrode techniques were employed to study the mechanism by which amphotericin B induces a transient mucosa-negative transepithelial potential (deltaVms) in the gallbladder of Necturus. When the tissue was incubated in standard Na-Ringer's solution, the antibiotic reduced the apical membrane potential by about 40 mV, and the basolateral membrane potential by about 35 mV, whereas the transepithelial potential increased by about 5 mV. The electrical resistance of the apical membrane fell by 83%, and that of the basolateral membrane by 40%; the paracellular resistance remained unchanged. Circuit analysis indicated that the equivalent electromotive forces of the apical and basolateral membranes fell by 35 and 11 mV, respectively. Changes in potentials and resistances produced by ionic substitutions in the mucosal bathing medium showed that amphotericin B produces a nonselective increase in apical membrane small monovalent cation conductance (K, Na, Li). In the presence of Na-Ringer's on the mucosal side, this resulted in a reduction of the K permselectivity of the membrane, and thus in a fall of its equivalent emf. During short term exposure to amphotericin B, PNa/PCl across the paracellular pathway did not change significantly, whereas PK/PNa doubled. These results indicate that deltaVms is due to an increase of gNa across the luminal membranes of the epithelial cells (Cremaschi et al., 1977. J. Membrane Biol. 34:55); the data do not support the alternative hypothesis (Rose & Nahrwold, 1976. J. Membrane Biol 29:1) that deltaVms results from a reduction in shunt PNa/PCl acting in combination with a rheogenic basolateral Na pump.

摘要

采用细胞内微电极技术研究两性霉素B在美西螈胆囊中诱导短暂黏膜负性跨上皮电位(deltaVms)的机制。当组织在标准钠林格溶液中孵育时,抗生素使顶端膜电位降低约40 mV,基底外侧膜电位降低约35 mV,而跨上皮电位增加约5 mV。顶端膜电阻下降83%,基底外侧膜电阻下降40%;细胞旁电阻保持不变。电路分析表明,顶端和基底外侧膜的等效电动势分别下降35和11 mV。黏膜浴液中离子置换所产生的电位和电阻变化表明,两性霉素B使顶端膜小单价阳离子(K、Na、Li)电导非选择性增加。在黏膜侧存在钠林格溶液的情况下,这导致膜的K选择性透过性降低,从而使其等效电动势下降。在短期暴露于两性霉素B期间,跨细胞旁途径的PNa/PCl没有显著变化,而PK/PNa增加了一倍。这些结果表明,deltaVms是由于上皮细胞腔面膜上gNa增加所致(Cremaschi等人,1977年。《膜生物学杂志》34:55);数据不支持另一种假设(Rose和Nahrwold,1976年。《膜生物学杂志》29:1),即deltaVms是由分流PNa/PCl降低与生电基底外侧钠泵共同作用导致的。

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