Schlag H, Lücke-Huhle C
Int J Radiat Biol Relat Stud Phys Chem Med. 1981 Jul;40(1):75-85.
Depression of the DNA synthetic rate of exponentially growing V79 cells was transient with a dose-dependent maximum at 1 hour after exposure to sparsely or densely ionizing radiation. The dose-effect curves were biphasic for 241Am alpha-particles as well as for 60Co gamma-rays, being partly congruent if inhibition of DNA synthesis was expressed per S-phase cell. The lesions responsible caused a prolongation of the DNA synthetic period (S-phase) after sparsely ionizing X- or 60Co gamma-rays. However, no such effect was observed during the first 4 hours after exposure to densely ionizing alpha particles, peak pions and high LET neon ions. The effect was dose-rate independent. The inhibition of the DNA synthetic rate seems to be only partly related to survival.
指数生长的V79细胞DNA合成速率的降低是短暂的,在暴露于稀疏或密集电离辐射后1小时出现剂量依赖性最大值。对于241Amα粒子和60Coγ射线,剂量效应曲线都是双相的,如果按每个S期细胞来表示DNA合成的抑制,则部分一致。在受到稀疏电离的X射线或60Coγ射线照射后,所造成的损伤会导致DNA合成期(S期)延长。然而,在暴露于密集电离的α粒子、π介子峰值和高传能线密度的氖离子后最初4小时内未观察到这种效应。该效应与剂量率无关。DNA合成速率的抑制似乎仅部分与细胞存活相关。