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由噬菌体mu以及转座抗性元件Tn5和Tn10的插入所诱导的大肠杆菌中的诱变突变。

Mutator mutations in Escherichia coli induced by the insertion of phage mu and the transposable resistance elements Tn5 and Tn10.

作者信息

Siegel E C, Wain S L, Meltzer S F, Binion M L, Steinberg J L

出版信息

Mutat Res. 1982 Mar;93(1):25-33. doi: 10.1016/0027-5107(82)90122-1.

Abstract

Mutator mutations in the mutS gene induced by the insertion of phage Mu or the transposable resistance elements Tn5 or Tn10 and those in the mutL gene induced by Tn5 or Tn10 gave mutagenic activities similar to that of the previously described mutS3 and mutL25 mutations. Various combinations of mutS::Tn5, muL::Tn5, uvrE156, and the deletion mutation delta mutH2 did not produce an additive effect. This supports the idea that the products of these genes function in the same pathway of error correction during DNA synthesis.

摘要

由噬菌体Mu或转座抗性元件Tn5或Tn10插入诱导的mutS基因突变,以及由Tn5或Tn10诱导的mutL基因突变,产生的诱变活性与先前描述的mutS3和mutL25突变相似。mutS::Tn5、muL::Tn5、uvrE156和缺失突变delta mutH2的各种组合未产生累加效应。这支持了这些基因的产物在DNA合成过程中的同一错配修复途径中发挥作用的观点。

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