Nakao S, Curthoys I S, Markham C H
Exp Brain Res. 1980;40(3):283-93. doi: 10.1007/BF00237793.
Brainstem pause neurons (PNs) exhibit a tonic discharge during the slow phase of horizontal vestibular nystagmus and pause prior to and during the quick phase in both directions. One type of pontomedullary burst neurons, burst inhibitory neurons (BINs), show a high frequency burst of spikes before and during the quick phase to the ipsilateral side and this burst directly inhibits contralateral abducens motoneurons, terminating the slow phase firing of these motoneurons. The present study focused on synaptic relations between PNs and BINs. The following data supported the conclusion that PNs probably make direct inhibitory connections with BINs and produce IPSPs in BINs during the slow phase of horizontal vestibular nystagmus: (a) there were positive field potentials in the BIN area during the slow phase; (b) PNs were antidromically activated from BIN areas bilaterally; (c) systematic microstimulation of the BIN area revealed a pattern consistent with axonal branching in the BIN area; (d) repetitive microstimulation of the PN area induced a positive shift in the field potential in the BIN area and suppressed both the characteristic bursts of BINs and nystagmic activity of the contralateral abducens nerve; (e) microstimulation of the PN area during intracellular recording of BINs induced monosynaptic latency hyperpolarizing potentials which could be reversed by C1- injection; (f) during intracellular recording from BINs during vestibular nystagmus in either direction, the membrane potential during the slow phases had a tonic hyperpolarization which was shown to be due to IPSPs by means of C1- injection. This study suggests that burst activity of BINs during the quick phase is caused by abrupt release from PN IPSPs (disinhibition), besides some excitatory inputs from other sources.
脑干暂停神经元(PNs)在水平前庭眼震的慢相期间呈现持续性放电,并在两个方向的快相之前和期间暂停放电。一种脑桥延髓爆发神经元,即爆发抑制神经元(BINs),在快相朝向同侧的过程中及之前会出现高频放电脉冲,并且这种放电脉冲直接抑制对侧展神经运动神经元,从而终止这些运动神经元的慢相放电。本研究聚焦于PNs与BINs之间的突触关系。以下数据支持了这样的结论:在水平前庭眼震的慢相期间,PNs可能与BINs建立直接抑制性连接并在BINs中产生抑制性突触后电位(IPSPs):(a)慢相期间BIN区域存在正性场电位;(b)PNs可从双侧BIN区域被逆向激活;(c)对BIN区域进行系统性微刺激显示出一种与BIN区域轴突分支相一致的模式;(d)对PN区域进行重复微刺激会导致BIN区域场电位出现正向偏移,并抑制BINs的特征性放电脉冲以及对侧展神经的眼震活动;(e)在对BINs进行细胞内记录时对PN区域进行微刺激会诱发单突触潜伏期超极化电位,该电位可通过注入氯离子而被逆转;(f)在前庭眼震的任一方向期间对BINs进行细胞内记录时,慢相期间的膜电位存在持续性超极化,通过注入氯离子表明这是由IPSPs所致。本研究表明,除了来自其他来源的一些兴奋性输入外,快相期间BINs的爆发活动是由PNs的IPSPs突然解除抑制所引起的。