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借助硅光元件演示超硬X射线(作者译)

[Demonstration of ultra-hard X-radiation by means of silicon photo-elements (author's transl)].

作者信息

Löffler E, Seeger W

出版信息

Strahlentherapie. 1980 Dec;156(12):824-7.

PMID:7456090
Abstract

Commercial silicon photo-elements were irradiated with 8 MV X-rays and 10 MeV electrons in the linear accelerator SL 75/10, and their usability as monitors and dosemeters was examined. The short circuit current of the photo-elements, which is linear to the transmitted dose rate, was measured with an expressly developed impulse amplifier which is sensitive to electricity. Further examinations as to the energy dependence proved a nearly constant sensitivity within the scope of 1 to 10 MeV. However, there are irradiation damages within this scope, which lead to a decrease of the sensitivity to photo-electricity producing a degeneration rate of 100 to 9 MGy-1. The examination showed on the other hand that, because of their simple measuring principle, the easily reproducible results, and the high sensitivity, the photo-elements can find various applications as monitors with direct display for relative measurements.

摘要

商用硅光元件在直线加速器SL 75/10中用8兆伏X射线和10兆电子伏电子进行辐照,并检验其作为监测器和剂量计的适用性。用光元件的短路电流与透射剂量率呈线性关系,该电流用专门研制的对电敏感的脉冲放大器进行测量。关于能量依赖性的进一步检验证明,在1至10兆电子伏范围内灵敏度几乎恒定。然而,在此范围内存在辐照损伤,这导致对光电的灵敏度降低,产生100至9戈瑞-1的退化率。另一方面,检验表明,由于其简单的测量原理、易于重现的结果和高灵敏度,光元件可作为具有直接显示功能的监测器用于相对测量,有各种应用。

相似文献

1
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2
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