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电子质量散射本领:蒙特卡罗法与解析计算

Electron mass scattering powers: Monte Carlo and analytical calculations.

作者信息

Li X A, Rogers D W

机构信息

Institute for National Measurement Standards, National Research Council, Canada, Ottawa.

出版信息

Med Phys. 1995 May;22(5):531-41. doi: 10.1118/1.597582.

Abstract

Values of electron mass scattering power, T/p, for various materials have been calculated by using the EGS4 Monte Carlo system and by integration of the Molière multiple-scattering distribution. The energy range covered is 0.5-100 MeV. Monte Carlo calculations test the concept of T/p "experimentally" and assess the contribution to electron mass scattering power from effects such as Moller scatter and energy-loss straggling. The Monte Carlo results agree within 2% with the analytical results calculated from Molière multiple-scattering theory at energies less than 20 MeV for high-Z materials and for energies less than 50 MeV for low-Z materials. At higher energies the Monte Carlo calculations include the effects of bremsstrahlung production which can significantly increase values of T/p. For low-Z materials and electron energies less than 60 MeV, the Monte Carlo calculated T/p values are generally 22% higher than those given by ICRU Report 35, while those for high-Z materials and energies less than 25 MeV are found to be consistent (within 1%) with ICRU Report 35. The effects of Moller scatter, which significantly affect T/p for low-Z materials, as well as bremsstrahlung effects, are included in the present Monte Carlo calculations. If the tabulated T/p data of ICRU Report 35 are modified to include the Moller scatter effect, then for energies less than 60 MeV they are generally 6% less than the present Monte Carlo data for low-Z materials as well as for copper. It is shown that T/p is a well-defined constant over an appropriate range of slab thickness except when bremsstrahlung effects are significant. It is found that T/p is proportional to E-n, where n is in the range of 1.5-2.0 for the energies considered here. The Monte Carlo calculations are shown to agree well with various relevant experimental measurements. Accurate T/p data, which should include the effect of Moller scatter, are necessary in electron-beam treatment planning, especially for a small field size. The choice of the depth step in the implementation of pencil-beam codes should not violate the slab-thickness limits for T/p data.

摘要

利用EGS4蒙特卡罗系统并通过对莫利埃多次散射分布进行积分,计算了各种材料的电子质量散射功率值T/p。所涵盖的能量范围为0.5 - 100 MeV。蒙特卡罗计算“实验性地”检验了T/p的概念,并评估了诸如莫勒散射和能量损失离散等效应对电子质量散射功率的贡献。对于高Z材料,在能量小于20 MeV时,蒙特卡罗结果与根据莫利埃多次散射理论计算的分析结果在2%以内相符;对于低Z材料,在能量小于50 MeV时相符。在更高能量下,蒙特卡罗计算包括了轫致辐射产生的效应,这会显著增加T/p的值。对于低Z材料且电子能量小于60 MeV,蒙特卡罗计算得到的T/p值通常比ICRU第35号报告给出的值高22%,而对于高Z材料且能量小于25 MeV,发现与ICRU第35号报告一致(在1%以内)。本蒙特卡罗计算中包括了对低Z材料的T/p有显著影响的莫勒散射效应以及轫致辐射效应。如果修改ICRU第35号报告中列出的T/p数据以包括莫勒散射效应,那么对于能量小于60 MeV的情况,它们通常比低Z材料以及铜的当前蒙特卡罗数据低6%。结果表明,除了轫致辐射效应显著时,T/p在适当的平板厚度范围内是一个定义明确的常数。发现T/p与E - n成正比,这里对于所考虑的能量,n在1.5 - 2.0范围内。蒙特卡罗计算结果与各种相关实验测量结果吻合良好。准确的T/p数据(应包括莫勒散射效应)在电子束治疗计划中是必要的,特别是对于小射野尺寸。在实施笔形束代码时深度步长的选择不应违反T/p数据的平板厚度限制。

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