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原代神经元培养中过氧化氢诱导细胞死亡的详细分析。

A detailed analysis of hydrogen peroxide-induced cell death in primary neuronal culture.

作者信息

Whittemore E R, Loo D T, Watt J A, Cotman C W

机构信息

Department of Psychobiology, University of California, Irvine 92717, USA.

出版信息

Neuroscience. 1995 Aug;67(4):921-32. doi: 10.1016/0306-4522(95)00108-u.

Abstract

A variety of neurodegenerative disease states have been associated with oxidative damage or stress. Such stress is thought to be mediated by excessive exposure of cells to reactive oxygen species such as free radicals, which can be generated following cell lysis, oxidative burst (as part of the immune response) or by the presence of an excess of free transition metals. Since the neuronal death observed in neurodegenerative diseases may be related to free radical damage, we were interested in developing a model system to investigate the mechanisms by which reactive oxygen species may damage or kill neurons. To this end, we have recently reported that brief exposure of cultured cortical neurons to H2O2 can induce neuronal death that proceeds via an apoptotic cell suicide pathway. The studies reported here investigate H2O2-induced cell death in more detail. Our data suggest that exposure of cultured cortical neurons to H2O2 can induce apoptotic cell death within 3 h, as assessed by cell viability, morphological and ultrastructural measures. In addition, experiments presented show that exposure to high concentrations of H2O2 (100 microM) causes increases in intracellular free calcium within 3 h, suggesting that increased intracellular calcium may be associated with some aspects of H2O2-induced cell death. However, at intermediate concentrations of H2O2 (30 microM), intracellular calcium remained stable during a 3 h exposure, during which time membrane blebbing was observed in ultrastructural studies. This suggests that some aspects of apoptotic cell death induced by H2O2 may not be associated with increased intracellular free calcium. Thus, this model appears valuable for studies of the mechanism(s) by which oxidative injury may induce apoptotic cell death and damage to neurons in the CNS.

摘要

多种神经退行性疾病状态都与氧化损伤或应激有关。这种应激被认为是由细胞过度暴露于活性氧物质(如自由基)介导的,自由基可在细胞裂解、氧化爆发(作为免疫反应的一部分)或存在过量游离过渡金属时产生。由于在神经退行性疾病中观察到的神经元死亡可能与自由基损伤有关,我们对开发一个模型系统来研究活性氧物质可能损伤或杀死神经元的机制很感兴趣。为此,我们最近报道,将培养的皮层神经元短暂暴露于过氧化氢(H2O2)可诱导通过凋亡性细胞自杀途径发生的神经元死亡。本文报道的研究更详细地探讨了H2O2诱导的细胞死亡。我们的数据表明,将培养的皮层神经元暴露于H2O2后3小时内可诱导凋亡性细胞死亡,这通过细胞活力、形态学和超微结构测量来评估。此外,所展示的实验表明,暴露于高浓度的H2O2(100微摩尔)会在3小时内导致细胞内游离钙增加,这表明细胞内钙增加可能与H2O2诱导的细胞死亡的某些方面有关。然而,在中等浓度的H2O2(30微摩尔)下,细胞内钙在3小时的暴露期间保持稳定,在此期间超微结构研究中观察到了细胞膜泡化。这表明H2O2诱导的凋亡性细胞死亡的某些方面可能与细胞内游离钙增加无关。因此,这个模型对于研究氧化损伤可能诱导凋亡性细胞死亡以及对中枢神经系统神经元造成损伤的机制似乎很有价值。

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