Shieh C C, Kirsch G E
Department of Molecular Physiology and Biophysics, Baylor College of Medicine, Houston, Texas 77030.
Biophys J. 1994 Dec;67(6):2316-25. doi: 10.1016/S0006-3495(94)80718-0.
Pore properties that distinguish two cloned, voltage-gated K+ channels, Kv2.1 and Kv3.1, include single-channel conductance, block by external and internal tetraethylammonium, and block by 4-aminopyridine. To define the inner mouth of voltage-gated K+ channels, segmental exchanges and point mutations of nonconserved residues were used. Transplanting the cytoplasmic half of either transmembrane segments S5 or S6 from Kv3.1 into Kv2.1 reduced sensitivity to block by internal tetraethylammonium, increased sensitivity to 4-aminopyridine, and reduced single-channel conductance. In S6, changes in single-channel conductance and internal tetraethylammonium sensitivity were associated with point mutations V400T and L403 M, respectively. Although individual residues in both S5 and S6 were found to affect 4-aminopyridine blockade, the most effective change was L327F in S5. Thus, both S5 and S6 contribute to the inner mouth of the pore but different residues regulate ion conduction and blockade by internal tetraethylammonium and 4-aminopyridine.
区分两种克隆的电压门控钾通道Kv2.1和Kv3.1的孔道特性包括单通道电导、外部和内部四乙铵的阻断以及4-氨基吡啶的阻断。为了确定电压门控钾通道的内口,使用了非保守残基的片段交换和点突变。将Kv3.1的跨膜片段S5或S6的胞质半段移植到Kv2.1中,可降低对内四乙铵阻断的敏感性,增加对4-氨基吡啶的敏感性,并降低单通道电导。在S6中,单通道电导的变化和对内四乙铵敏感性的变化分别与点突变V400T和L403M相关。虽然发现S5和S6中的个别残基会影响4-氨基吡啶的阻断,但最有效的变化是S5中的L327F。因此,S5和S6都对孔道的内口有贡献,但不同的残基调节离子传导以及内四乙铵和4-氨基吡啶的阻断作用。