Aiyar J, Nguyen A N, Chandy K G, Grissmer S
Department of Physiology and Biophysics, University of California, Irvine 92717.
Biophys J. 1994 Dec;67(6):2261-4. doi: 10.1016/S0006-3495(94)80710-6.
The loop between transmembrane regions S5 and S6 (P-region) of voltage-gated K+ channels has been proposed to form the ion-conducting pore, and the internal part of this segment is reported to be responsible for ion permeation and internal tetraethylammonium (TEA) binding. The two T-cell K+ channels, Kv3.1 and Kv1.3, with widely divergent pore properties, differ by a single residue in this internal P-region, leucine 401 in Kv3.1 corresponding to valine 398 in Kv1.3. The L401V mutation in Kv3.1 was created with the anticipation that the mutant channel would exhibit Kv1.3-like deep-pore properties. Surprisingly, this mutation did not alter single channel conductance and only moderately enhanced internal TEA sensitivity, indicating that residues outside the P-region influence these properties. Our search for additional residues was guided by the model of Durell and Guy, which predicted that the C-terminal end of S6 formed part of the K+ conduction pathway. In this segment, the two channels diverge at only one position, Kv3.1 containing M430 in place of leucine in Kv1.3. The M430L mutant of Kv3.1 exhibited permeant ion- and voltage-dependent flickery outward single channel currents, with no obvious changes in other pore properties. Modification of one or more ion-binding sites located in the electric field and possibly within the channel pore could give rise to this type of channel flicker.
电压门控钾通道跨膜区域S5和S6之间的环(P区)被认为形成了离子传导孔,据报道该片段的内部部分负责离子通透和内部四乙铵(TEA)结合。两种T细胞钾通道Kv3.1和Kv1.3,具有广泛不同的孔特性,在这个内部P区仅一个残基不同,Kv3.1中的亮氨酸401对应于Kv1.3中的缬氨酸398。Kv3.1中的L401V突变产生,预期突变通道将表现出类似Kv1.3的深孔特性。令人惊讶的是,这种突变并未改变单通道电导,仅适度增强了内部TEA敏感性,表明P区之外的残基影响这些特性。我们对其他残基的搜索是由Durell和Guy的模型指导的,该模型预测S6的C末端形成钾离子传导途径的一部分。在这个片段中,这两种通道仅在一个位置不同,Kv3.1含有M430,而Kv1.3中为亮氨酸。Kv3.1的M430L突变体表现出依赖于通透离子和电压的闪烁外向单通道电流,其他孔特性没有明显变化。位于电场中且可能在通道孔内的一个或多个离子结合位点的修饰可能导致这种类型的通道闪烁。