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番茄对青枯病寡基因抗性的遗传剖析

Genetic dissection of oligogenic resistance to bacterial wilt in tomato.

作者信息

Danesh D, Aarons S, McGill G E, Young N D

机构信息

Department of Plant Pathology, University of Minnesota, St. Paul 55108.

出版信息

Mol Plant Microbe Interact. 1994 Jul-Aug;7(4):464-71. doi: 10.1094/mpmi-7-0464.

Abstract

To study resistance to bacterial wilt (caused by Pseudomonas solanacearum) in tomato, we analyzed 71 F2 individuals from a cross between a resistant and a susceptible parent with 79 DNA markers. F2 plants were inoculated by two methods: bacteria were injected into shoots of cuttings or poured into soil surrounding wounded roots. Disease responses were scored on a scale of 0 to 5. Statistical comparisons between DNA marker genotypes and disease phenotypes identified three genomic regions correlated with resistance. In plants inoculated through roots, genomic regions on chromosomes 6 and 10 were correlated with resistance. In plants inoculated through shoots, a region on chromosome 7 was significant, as were the regions on chromosomes 6 and 10. The relative impact of resistance loci on disease response differed between shoot and root inoculations. To confirm the existence of a partial resistance gene on chromosome 6, an F2 individual homozygous for the resistant parent's alleles on chromosomes 7 and 10, but heterozygous for markers on chromosome 6, was selfed. Analysis of the F3 progeny confirmed that a partial resistance locus was located on chromosome 6, very close to CT184. The presence of a partial resistance locus on chromosome 10 was similarly confirmed by analysis of progeny of another F2 plant chosen on the basis of its marker phenotype.

摘要

为了研究番茄对青枯病(由青枯假单胞菌引起)的抗性,我们用79个DNA标记分析了来自抗性亲本与感病亲本杂交的71个F2个体。F2植株通过两种方法接种:将细菌注射到插条的茎中或倒入受伤根周围的土壤中。病害反应按0至5级评分。DNA标记基因型与病害表型之间的统计比较确定了三个与抗性相关的基因组区域。在通过根部接种的植株中,6号和10号染色体上的基因组区域与抗性相关。在通过茎部接种的植株中,7号染色体上的一个区域以及6号和10号染色体上的区域都很显著。抗性位点对病害反应的相对影响在茎部接种和根部接种之间有所不同。为了证实6号染色体上存在一个部分抗性基因,对一个F2个体进行了自交,该个体在7号和10号染色体上对抗性亲本的等位基因是纯合的,但在6号染色体上的标记是杂合的。对F3后代的分析证实,一个部分抗性位点位于6号染色体上,非常靠近CT184。通过对另一个根据其标记表型选择的F2植株后代的分析,同样证实了10号染色体上存在一个部分抗性位点。

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