Ritter S, Nasonova E, Kraft-Weyrather W, Kraft G
GSI, Biophysics, Darmstadt, Germany.
Int J Radiat Biol. 1994 Nov;66(5):625-8. doi: 10.1080/09553009414551721.
The amount of chromosomal damage induced in synchronous V79 cells by either 250 kV X-rays or 4.6 MeV/u Ar ions (LET: 1850 keV/microns) was determined at five successive sampling times. The experiments show that the time course of the appearance of damaged cells is strongly influenced by radiation-induced cell cycle perturbations and mitotic delay and depends on radiation quality and dose. The yield of chromosomal damage was found to increase with sampling time, but this increase was more pronounced for Ar ions. Because of the observed differences in the yield time profiles induced by sparsely and densely ionizing radiation the contribution of each sample to the overall damage was considered, i.e. the total (time integrated) amount of damage was determined. The obtained data are interpreted in terms of differences in the spatial energy deposition by sparsely and densely ionizing radiation.
在五个连续的采样时间点，测定了250 kV X射线或4.6 MeV/u 氩离子（传能线密度：1850 keV/微米）对同步化V79细胞诱导的染色体损伤量。实验表明，受损细胞出现的时间进程受到辐射诱导的细胞周期扰动和有丝分裂延迟的强烈影响，并取决于辐射质量和剂量。发现染色体损伤的产额随采样时间增加，但这种增加在氩离子情况下更为明显。由于观察到稀疏和密集电离辐射诱导的产额时间分布存在差异，考虑了每个样本对总体损伤的贡献，即确定了损伤的总量（时间积分）。根据稀疏和密集电离辐射在空间能量沉积方面的差异对获得的数据进行了解释。
