Glaum S R, Miller R J, Hammond D L
Department of Pharmacological and Physiological Sciences, University of Chicago, Illinois 60637.
J Neurosci. 1994 Aug;14(8):4965-71. doi: 10.1523/JNEUROSCI.14-08-04965.1994.
This study examined the electrophysiological consequences of selective activation of delta 1-, delta 2-, or mu-opioid receptors using whole-cell recordings made from visually identified lamina II neurons in thin transverse slices of young adult rat lumbar spinal cord. Excitatory postsynaptic currents (EPSCs) or potentials (EPSPs) were evoked electrically at the ipsilateral dorsal root entry zone after blocking inhibitory inputs with bicuculline and strychnine, and NMDA receptors with D-2-amino-5-phosphonopentanoic acid. Bath application of the mu receptor agonist [D-Ala2, N-MePhe4, Gly5-ol]enkephalin (DAMGO) or the delta 1 receptor agonist [D-Pen2, D-Pen5]enkephalin (DPDPE) produced a long-linear, concentration-dependent reduction in the amplitude of the evoked EPSP/EPSC. By comparison, the delta 2 receptor agonist [D-Ala2,Glu4]deltorphin (DELT) was unable to reduce the evoked EPSP/EPSC by more than 50% at 100 microM, the highest concentration tested. At concentrations that reduced evoked EPSP/EPSCs by 40-60%, neither DAMGO, DPDPE, nor DELT decreased the amplitude of the postsynaptic current produced by brief pressure ejection of (S)-alpha-amino-3-hydroxy-5-methyl-4-isoxazole-propionic acid, suggesting a presynaptic site of action of these opioid receptor agonists. Bath application of 200 nM naltriben (NTB), a delta 2 receptor antagonist, competitively increased the EC75 of DELT by 15.3-fold, but did not antagonize either DPDPE or DAMGO. The EC75 of DELT was further increased by 169.7-fold in the presence of 1 microM NTB. However, this high concentration of NTB also increased the EC50 of DPDPE by about threefold in a noncompetitive manner and antagonized DAMGO in a noncompetitive manner.(ABSTRACT TRUNCATED AT 250 WORDS)
本研究利用全细胞膜片钳记录技术,在年轻成年大鼠腰段脊髓薄横切片中,对经视觉识别的Ⅱ层神经元进行研究,以检测选择性激活δ1、δ2或μ阿片受体后的电生理效应。在用荷包牡丹碱和士的宁阻断抑制性输入,并用地-2-氨基-5-磷酰戊酸阻断NMDA受体后,在同侧背根进入区电诱发兴奋性突触后电流(EPSCs)或电位(EPSPs)。浴槽应用μ受体激动剂[D-丙氨酸2,N-甲基苯丙氨酸4,甘氨酸5-醇]脑啡肽(DAMGO)或δ1受体激动剂[D-青霉胺2,D-青霉胺5]脑啡肽(DPDPE),可使诱发的EPSP/EPSC幅度呈长线性、浓度依赖性降低。相比之下,δ2受体激动剂[D-丙氨酸2,谷氨酸4]强啡肽(DELT)在100μM(测试的最高浓度)时,也无法使诱发的EPSP/EPSC降低超过50%。在使诱发的EPSP/EPSCs降低40%-60%的浓度下,DAMGO、DPDPE和DELT均未降低由(S)-α-氨基-3-羟基-5-甲基-4-异恶唑丙酸短暂压力喷射产生的突触后电流幅度,提示这些阿片受体激动剂的作用位点在突触前。浴槽应用200 nM纳曲苄(NTB),一种δ2受体拮抗剂,可使DELT的EC75竞争性增加15.3倍,但不拮抗DPDPE或DAMGO。在1μM NTB存在下,DELT的EC75进一步增加169.7倍。然而,这种高浓度的NTB也以非竞争性方式使DPDPE的EC50增加约三倍,并以非竞争性方式拮抗DAMGO。(摘要截短于250字)