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RIIA 钠通道快速和慢速门控模式的电压依赖性。

Voltage dependencies of the fast and slow gating modes of RIIA sodium channels.

作者信息

Hebert T E, Monette R, Dunn R J, Drapeau P

机构信息

Centre for Research in Neuroscience, McGill University, Montreal, Quebec, Canada.

出版信息

Proc Biol Sci. 1994 Jun 22;256(1347):253-61. doi: 10.1098/rspb.1994.0078.

Abstract

Rat brain IIA sodium channel alpha-subunits were expressed in Xenopus oocytes, and the sodium currents were measured by intracellular voltage clamping with large agarose-tipped electrodes and by excised membrane patch-clamp recording to separate and characterize the properties of the fast and slow channel gating modes. The currents showed biexponential inactivation properties with fast and slow phases that could be isolated as distinct gating modes through differences in their inactivation properties. At holding potentials more negative than -55 mV, fast mode currents inactivated within a few milliseconds of depolarization, and could be distinguished by their rapid recovery from inactivation. Single sodium channels in the fast mode opened early after depolarization and rarely showed re-openings. At holding potentials positive to -55 mV, fast mode currents were inactivated, revealing slow mode currents which had slower activation and inactivation kinetics and showed sustained single channel activity during depolarizing pulses. The steady-state voltage dependencies of fast and slow mode activation were very similar. In contrast, slow mode inactivation occurred at potentials 27 mV more positive than fast mode inactivation. The slow mode appears to be due to destabilization of a voltage-insensitive conformation of the channel. The fast gating process dominated at high current levels, perhaps due to alpha-subunit interactions.

摘要

大鼠脑IIA钠通道α亚基在非洲爪蟾卵母细胞中表达,通过使用大型琼脂糖尖端电极进行细胞内电压钳制以及通过切除膜片钳记录来测量钠电流,以分离和表征快速和慢速通道门控模式的特性。电流表现出双指数失活特性,具有快速和慢速相,通过它们失活特性的差异可将其分离为不同的门控模式。在保持电位比 -55 mV更负时,快速模式电流在去极化后几毫秒内失活,并且可通过其从失活中快速恢复来区分。快速模式下的单个钠通道在去极化后早期开放,很少显示重新开放。在保持电位高于 -55 mV时,快速模式电流失活,揭示出慢速模式电流,其具有较慢的激活和失活动力学,并且在去极化脉冲期间显示持续的单通道活性。快速和慢速模式激活的稳态电压依赖性非常相似。相比之下,慢速模式失活发生的电位比快速模式失活高27 mV。慢速模式似乎是由于通道的电压不敏感构象的不稳定所致。快速门控过程在高电流水平下起主导作用,这可能是由于α亚基相互作用。

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