Hofer K G, van Loon N, Schneiderman M H, Dalrymple G V
Institute of Molecular Biophysics, Florida State University, Tallahassee 32306.
Int J Radiat Biol. 1993 Aug;64(2):205-16. doi: 10.1080/09553009314551311.
Chinese hamster ovary cells were labelled with 125I-iododeoxyuridine (1.15 x 10(3) Bq/ml) for 12 h, then synchronized by mitotic selection, plated for cell cycle traverse, and harvested during successive stages of the cell cycle for freezing and accumulation of 125I decays. Cell viability was evaluated by the colony-forming assay. Cells subjected to 125I decays during the G1 phase exhibited exponential survival curves with an N = 1 and a D0 = 38-41 decays/cell. A continuous increase in 125I resistance was observed as cells progressed through the S phase and cells in late-S/G2 yielded shouldered survival curves with a N = 2 and a D0 = 78-84 decays/cell. After mitosis, the radiation resistance of cells returned to G1 values. These findings suggest that the primary target for radiation-induced cell death is duplicated during S phase, with G1 cells containing one target and G2 cells two targets. Dual targets, although located within a single cell, act as independent entities as if already distributed between two separate daughter cells. Therefore, the colony-forming assay provides survival values representative of single cells/single targets only for cells irradiated during the G1 phase of the cell cycle. For cells irradiated in S or G2 phases, when intracellular target multiplicity > 1, the colony-forming assay systematically gives higher values of cell survival by up to 100% due to the target multiplicity. Experiments with external X-rays confirm these conclusions.
将中国仓鼠卵巢细胞用125I - 碘脱氧尿苷(1.15×10³贝克勒尔/毫升)标记12小时,然后通过有丝分裂选择进行同步化处理,接种以进行细胞周期进程研究,并在细胞周期的连续阶段收获,用于冷冻和累积125I衰变。通过集落形成试验评估细胞活力。在G1期受到125I衰变作用的细胞呈现指数存活曲线,N = 1,D0 = 38 - 41次衰变/细胞。随着细胞进入S期,观察到125I抗性持续增加,处于S期末期/G2期的细胞产生带坪的存活曲线,N = 2,D0 = 78 - 84次衰变/细胞。有丝分裂后,细胞的辐射抗性恢复到G1期的值。这些发现表明,辐射诱导细胞死亡的主要靶点在S期复制,G1期细胞含有一个靶点,G2期细胞含有两个靶点。两个靶点虽然位于单个细胞内,但作为独立实体起作用,就好像已经分布在两个独立的子细胞之间。因此,集落形成试验仅为在细胞周期G1期受到照射的细胞提供代表单细胞/单靶点的存活值。对于在S期或G2期受到照射的细胞,当细胞内靶点 multiplicity > 1时,由于靶点 multiplicity,集落形成试验系统地给出高达100%的更高细胞存活值。用外部X射线进行的实验证实了这些结论。