Conner E A, Yamauchi H, Fowler B A, Akkerman M
University of Maryland, Graduate School Baltimore 21227.
J Expo Anal Environ Epidemiol. 1993 Oct-Dec;3(4):431-40.
These studies were conducted to assess alterations in renal tubule cell gene expression following in vivo exposure to the semiconductor elements indium (In), arsenic (As) or indium arsenide (InAs). Alterations in proximal tubule cell gene expression were monitored at similar tissue concentrations of In or As at various time-points following single subcutaneous (sc) injections of In, As or InAs at 0, 10 and 30 days (In: 1.5 mg/kg; As, 3 mg/kg or 0.3 mg/k; and InAs: 1000 mg/kg). Protein synthesis as monitored by incorporation of 35S methionine was not statistically increased over the 30-day period following sc injection of As, In or InAs relative to controls. Two dimensional--SDS/polyacrylamide gel electrophoresis showed that exposure to InAs stimulated the synthesis of a number of proteins with molecular masses of < 10, 18, 28, 32, 38, 42, 58, 70, 98 KDa. Exposure to As produced an increase in the expression of thirteen gene products. Indium produced similar changes at the 10-day time-point, but increased tissue accumulation of this element at 30 days markedly suppressed the stress protein response. These data indicate that induction of these specific gene expression patterns may be useful as early indicators for assessing exposure to InAs, or inorganic As, while suppression of these responses by In suggests a compromise in this basic protective mechanism.
开展这些研究是为了评估体内暴露于半导体元素铟（In）、砷（As）或砷化铟（InAs）后肾小管细胞基因表达的变化。在单次皮下（sc）注射In、As或InAs后0、10和30天（In：1.5mg/kg；As：3mg/kg或0.3mg/kg；InAs：1000mg/kg），于不同时间点在相似的In或As组织浓度下监测近端小管细胞基因表达的变化。相对于对照组，在sc注射As、In或InAs后的30天内，通过掺入35S蛋氨酸监测的蛋白质合成在统计学上没有增加。二维-SDS/聚丙烯酰胺凝胶电泳显示，暴露于InAs刺激了许多分子量<10、18、28、32、38、42、58、70、98KDa的蛋白质的合成。暴露于As使13种基因产物的表达增加。铟在10天时间点产生了类似的变化，但在30天时该元素组织蓄积的增加显著抑制了应激蛋白反应。这些数据表明，诱导这些特定的基因表达模式可能作为评估暴露于InAs或无机As的早期指标有用，而In对这些反应的抑制表明这种基本保护机制受到损害。
