Panchalingam V, Chen X, Huo H H, Savage C R, Timmons R B, Eberhart R C
Department of Chemistry, University of Texas at Arlington 76019-0138.
ASAIO J. 1993 Jul-Sep;39(3):M305-9.
The authors studied a pulsed radiofrequency glow discharge polymer film deposition method (pRFGD) on polyethylene terephthalate (PET), silicon (Si), and potassium chloride (KCl) surfaces, with the aim of better controlling film uniformity and homogeneity. A pulse generator was used to control a conventional 13.56 MHz RFGD circuit to provide plasma on and off times throughout a wide range of duty cycles. Starting monomers included fluorocarbon monomers (C8F16O and C3F6O) and more conventional unsaturated monomers [acrylonitrile (C3H3N) and vinyl trimethyl silane (C5H12Si)]. With each of these monomers progressive, large scale changes in the molecular structure of the plasma deposited films were noted with systematic variations in the RF duty cycle. Film characterizations were performed using electron spectroscopy for chemical analysis (ESCA) and fourier transform infrared (FTIR) analysis. In the case of fluorocarbon (FC) films, systematically decreasing plasma on time at a constant off time resulted in enhanced CF2 and CF3 content compared with that seen with the less highly fluorinated groups. There was virtually no oxygen atom incorporation in the FC films obtained from the oxygen containing monomers. Overall, a dramatic decrease in cross-linking of the FC polymer films was observed with decreasing RF duty cycles. A highly ordered Teflon-like structure was obtained for the lowest duty cycles. In the silane experiments, a systematic variation in the ratio of Si-H/Si-CH3 groups was observed, with this ratio increasing as the RF duty cycle decreased. Experiments with C3H3N revealed an increasing surface density of -CN groups with decreasing RF duty cycle.(ABSTRACT TRUNCATED AT 250 WORDS)
作者研究了一种脉冲射频辉光放电聚合物薄膜沉积方法（pRFGD），用于在聚对苯二甲酸乙二酯（PET）、硅（Si）和氯化钾（KCl）表面沉积薄膜，目的是更好地控制薄膜的均匀性和同质性。使用脉冲发生器控制传统的13.56 MHz射频辉光放电电路，以在很宽的占空比范围内提供等离子体的开启和关闭时间。起始单体包括碳氟化合物单体（C8F16O和C3F6O）以及更传统的不饱和单体[丙烯腈（C3H3N）和乙烯基三甲基硅烷（C5H12Si）]。随着每种单体的变化，随着射频占空比的系统变化，观察到等离子体沉积薄膜的分子结构发生了大规模变化。使用电子能谱化学分析（ESCA）和傅里叶变换红外（FTIR）分析进行薄膜表征。对于碳氟化合物（FC）薄膜，在恒定关闭时间下系统地减少等离子体开启时间，与含氟程度较低的基团相比，CF2和CF3含量增加。从含氧化合物单体获得的FC薄膜中几乎没有氧原子掺入。总体而言，随着射频占空比的降低，观察到FC聚合物薄膜的交联显著减少。在最低占空比下获得了高度有序的类聚四氟乙烯结构。在硅烷实验中，观察到Si-H/Si-CH3基团比例的系统变化，该比例随着射频占空比的降低而增加。用C3H3N进行的实验表明，随着射频占空比的降低，-CN基团的表面密度增加。（摘要截取自250字）
