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[氦氖激光辐射作用下HeLa细胞中ATP含量的变化]

[Changes in the amount of ATP in HeLa cells under the action of He-Ne laser radiation].

作者信息

Karu T I, Piatibrat L V, Kalendo G S, Serebriakov N G

出版信息

Biull Eksp Biol Med. 1993 Jun;115(6):617-8.

PMID:8374142
Abstract

Amount of ATP in HeLa cells in various phases of growth was measured after He-Ne laser irradiation (100 J/m2, 10 W/m2, 10 s) by a bioluminescent luciferin-luciferase method. In cells of the exponential phase of growth, the amount of ATP (basal level 8 x 10(-16) mole/cell) starts to increase in 15 min after the irradiation with a maximum (170% above the basal level) at 20 min, and then decreases gradually to the basal level. The sensitivity of the cells to He-Ne laser radiation is lowest in lag-phase of growth, then increases to a plateau (approximately 185% above the control level) from 5th day of cultivation.

摘要

采用生物发光荧光素 - 荧光素酶法,在氦氖激光照射(100 J/m²,10 W/m²,10 s)后,测量处于不同生长阶段的HeLa细胞中的ATP含量。在生长指数期的细胞中,ATP含量(基础水平为8×10⁻¹⁶摩尔/细胞)在照射后15分钟开始增加,在20分钟时达到最大值(比基础水平高170%),然后逐渐降至基础水平。细胞在生长延迟期对氦氖激光辐射的敏感性最低,然后从培养第5天开始增加到一个平台期(比对照水平高约185%)。

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