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钾通道门控背后构象重排的直接物理测量。

Direct physical measure of conformational rearrangement underlying potassium channel gating.

作者信息

Mannuzzu L M, Moronne M M, Isacoff E Y

机构信息

Department of Molecular and Cell Biology, University of California, Berkeley 94720, USA.

出版信息

Science. 1996 Jan 12;271(5246):213-6. doi: 10.1126/science.271.5246.213.

Abstract

In response to membrane depolarization, voltage-gated ion channels undergo a structural rearrangement that moves charges or dipoles in the membrane electric field and opens the channel-conducting pathway. By combination of site-specific fluorescent labeling of the Shaker potassium channel protein with voltage clamping, this gating conformational change was measured in real time. During channel activation, a stretch of at least seven amino acids of the putative transmembrane segment S4 moved from a buried position into the extracellular environment. This movement correlated with the displacement of the gating charge, providing physical evidence in support of the hypothesis that S4 is the voltage sensor of voltage-gated ion channels.

摘要

响应膜去极化时,电压门控离子通道会发生结构重排,这种重排会使膜电场中的电荷或偶极移动,并打开通道传导通路。通过将摇椅式钾通道蛋白的位点特异性荧光标记与电压钳制相结合,实时测量了这种门控构象变化。在通道激活过程中,假定的跨膜片段S4中至少七个氨基酸的一段从埋藏位置移动到细胞外环境中。这种移动与门控电荷的位移相关,为S4是电压门控离子通道的电压传感器这一假说提供了物理证据。

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