Das S K, Mishra A K
Department of Microbiology, Bose Institute, Calcutta, India.
J Bacteriol. 1996 Jun;178(12):3628-33. doi: 10.1128/jb.178.12.3628-3633.1996.
Transposon insertion mutagenesis was used to isolate mutants of Bosea thiooxidans which are impaired in thiosulfate oxidation. Suicide plasmid pSUP5011 was used to introduce the transposon Tn5 into B. thiooxidans via Escherichia coli S17.1-mediated conjugation. Neomycin-resistant transconjugants occurred at a frequency of 2.2 X 10(-4) per donor. Transconjugants defective in thiosulfate oxidation were categorized into three classes on the basis of growth response, enzyme activities, and cytochrome patterns. Class I mutants were deficient in cytochrome c, and no thiosulfate oxidase activity was detected. Class II mutants retained the activities of key enzymes of thiosulfate metabolism, although at reduced levels. Mutants of this class grown on mixed-substrate agar plates deposited elemental sulfur on the colony surfaces. Class III mutants were unable to utilize thiosulfate, though they had normal levels of cytochrome c. The transposon insertions occurred at different chromosomal positions, as confirmed by Southern blotting of chromosomal DNA of mutants deficient in thiosulfate oxidation, a deficiency which resulted from single insertions of Tn5.
转座子插入诱变被用于分离硫氧化博斯氏菌中硫代硫酸盐氧化受损的突变体。自杀质粒pSUP5011被用于通过大肠杆菌S17.1介导的接合作用将转座子Tn5导入硫氧化博斯氏菌。新霉素抗性接合子的出现频率为每个供体2.2×10(-4)。根据生长反应、酶活性和细胞色素模式,将硫代硫酸盐氧化有缺陷的接合子分为三类。I类突变体细胞色素c缺乏,未检测到硫代硫酸盐氧化酶活性。II类突变体保留了硫代硫酸盐代谢关键酶的活性,尽管活性水平有所降低。在混合底物琼脂平板上生长的这类突变体在菌落表面沉积了元素硫。III类突变体虽然细胞色素c水平正常,但无法利用硫代硫酸盐。通过对硫代硫酸盐氧化缺陷突变体的染色体DNA进行Southern杂交证实,转座子插入发生在不同的染色体位置,这种缺陷是由Tn5的单插入导致的。