Sales BC, Mandrus D, Williams RK
B. C. Sales and D. Mandrus, Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. R. K. Williams, Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
Science. 1996 May 31;272(5266):1325-8. doi: 10.1126/science.272.5266.1325.
A class of thermoelectric materials has been synthesized with a thermoelectric figure of merit ZT (where T is temperature and Z is a function of thermopower, electrical resistivity, and thermal conductivity) near 1 at 800 kelvin. Although these materials have not been optimized, this value is comparable to the best ZT values obtained for any previously studied thermoelectric material. Calculations indicate that the optimized material should have ZT values of 1.4. These ternary semiconductors have the general formula RM4X12 (where R is lanthanum, cerium, praseodymium, neodymium, or europium; M is iron, ruthenium, or osmium; and X is phosphorus, arsenic, or antimony) and represent a new approach to creating improved thermoelectric materials. Several alloys in the composition range CeFe4-xCoxSb12 or LaFe4-xCoxSb12 (0 < x < 4) have large values of ZT.
一类热电材料已被合成出来,其在800开尔文时的热电优值ZT(其中T是温度,Z是热功率、电阻率和热导率的函数)接近1。尽管这些材料尚未优化,但该值与之前研究的任何热电材料所获得的最佳ZT值相当。计算表明,优化后的材料ZT值应为1.4。这些三元半导体的通式为RM4X12(其中R为镧、铈、镨、钕或铕;M为铁、钌或锇;X为磷、砷或锑),代表了一种制造性能更优热电材料的新方法。在组成范围为CeFe4-xCoxSb12或LaFe4-xCoxSb12(0 < x < 4)的几种合金具有较大的ZT值。